This paper presents a low-power robust static random access memory (SRAM) using a novel quasi-Schottky-barrier ultrathin body and ultrathin buried oxide (UTBB) silicon-on-insulator (SOI) device. In the proposed device, the ...

In this paper a new 3-D analytical model for the potential distribution in nano-scaled lightly doped trigate silicon on insulator MOSFETs in the subthreshold regime is proposed. This model is derived by solving 3-D Poisson's ...

A new analytical model for the subthreshold swing of nanoscale undoped trigate silicon-on-insulator

metal–oxide–semiconductor field-effect transistors (MOSFETs) is proposed, based on the channel potential distribution ...