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Fundamentals of nanoscale film analysis

Type: Ebook

Author : Alford T.L.; Feldman L.C.; Mayer J.W.

Publisher: Springer

Year: 2007

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Materials Analysis by Ion Channeling. Submicron crystallography

Type: Ebook

Author : Feldman L.C.; Mayer J.W.; Picraux S.T.

Publisher: Academic Press

Year: 1982

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Temperature-controlled surface plasmon resonance in VO _2 nanorods

Type: Journal Paper

Author : Lopez, R.; Haynes, T. E.; Boatner, L. A.; Feldman, L. C.; Haglund, Jr., R. F.

Publisher: Optical Society of America

Year: 2002

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The influence of SiC/SiO<inf>2</inf> interface morphology on the electrical characteristics of SiC MOS structures

Type: Conference Paper

Author : Liu, L.; Jiao, C.; Xu, Y.; Liu, G.; Feldman, L.C.; Dhar, S.

Publisher: IEEE

Year: 2014

Extremely high electron mobility in Si/GexSi1-x structures grown by molecular beam epitaxy

Type: Journal Paper

Author : Mii, Y. J.; Xie, Y. H.; Fitzgerald, E. A.; Monroe, Don; Thiel, F. A.; Weir, B. E.; Feldman, L. C.

Year: 1991

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High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

Type: Journal Paper

Author : Modic, Aaron; Gang Liu; Ahyi, Ayayi C.; Yuming Zhou; Pingye Xu; Hamilton, Michael C.; Williams, John R.; Feldman, L.C.; Dhar, Sudipta

Publisher: IEEE

Year: 2014

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Fundamentals of nanoscale film analysis

Materials Analysis by Ion Channeling. Submicron crystallography

Temperature-controlled surface plasmon resonance in VO _2 nanorods

The influence of SiC/SiO<inf>2</inf> interface morphology on the electrical characteristics of SiC MOS structures

Extremely high electron mobility in Si/GexSi1-x structures grown by molecular beam epitaxy

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

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Fundamentals of nanoscale film analysis

Materials Analysis by Ion Channeling. Submicron crystallography

Temperature-controlled surface plasmon resonance in VO _2 nanorods

The influence of SiC/SiO<inf>2</inf> interface morphology on the electrical characteristics of SiC MOS structures

Extremely high electron mobility in Si/GexSi1-x structures grown by molecular beam epitaxy

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping