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Modeling 20-nm Germanium FinFET With the Industry Standard FinFET Model

نوع: Journal Paper

نویسنده : Khandelwal, Sourabh; Duarte, Juan Pablo; Chauhan, Yogesh Singh; Chenming Hu

ناشر: IEEE

سال: 2014

Investigation of Silicon Nanowire Gate-All-Around Junctionless Transistors Built on a Bulk Substrate

نوع: Journal Paper

نویسنده : Moon, Dong-Il; Choi, Sung-Jin; Duarte, Juan Pablo; Choi, Yang-Kyu

سال: 2013

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Modeling of GaN-Based Normally-Off FinFET

نوع: Journal Paper

نویسنده : Yadav, Chandresh; Kushwaha, Pragya; Khandelwal, Sourabh; Duarte, Juan Pablo; Chauhan, Yogesh Singh; Chenming Hu

ناشر: IEEE

سال: 2014

BSIM-IMG with improved surface potential calculation recipe

نوع: Conference Paper

نویسنده : Kushwaha, Pragya; Yadav, Chandan; Agarwal, Harshit; Chauhan, Yogesh Singh; Srivatsava, Jandhyala; Khandelwal, Sourabh; Duarte, Juan Pablo; Hu, Chenming

ناشر: IEEE

سال: 2014

BSIM6: Analog and RF Compact Model for Bulk MOSFET

نوع: Journal Paper

نویسنده : Chauhan, Yogesh Singh; Venugopalan, Sarad; Chalkiadaki, Maria-Anna; Karim, Muhammed Ahosan Ul; Agarwal, Harshit; Khandelwal, Sourabh; Paydavosi, Navid; Duarte, Juan Pablo; Enz, C.C.; Niknejad, Ali M.; Chenming Hu

ناشر: IEEE

سال: 2014

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Modeling 20-nm Germanium FinFET With the Industry Standard FinFET Model

Investigation of Silicon Nanowire Gate-All-Around Junctionless Transistors Built on a Bulk Substrate

Modeling of GaN-Based Normally-Off FinFET

BSIM-IMG with improved surface potential calculation recipe

BSIM6: Analog and RF Compact Model for Bulk MOSFET

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Modeling 20-nm Germanium FinFET With the Industry Standard FinFET Model

Investigation of Silicon Nanowire Gate-All-Around Junctionless Transistors Built on a Bulk Substrate

Modeling of GaN-Based Normally-Off FinFET

BSIM-IMG with improved surface potential calculation recipe

BSIM6: Analog and RF Compact Model for Bulk MOSFET