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MOSFET modeling & BSIM3 user’s guide

Type: Ebook

Author : Yuhua Cheng; Chenming Hu

Publisher: Kluwer Academic

Year: 2002

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MOSFET Modeling and BSIM3 User's Guide

Type: Ebook

Author : Yuhua Cheng; Chenming Hu

Publisher: Springer

Year: 1999

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Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling

Type: Journal Paper

Author : Wen-Chin Lee; Chenming Hu

Year: 2001

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Hole injection SiO2 breakdown model for very low voltage lifetime extrapolation

Type: Journal Paper

Author : Schuegraf, K.F.; Chenming Hu

Year: 1994

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Impact of channel doping on the device and NBTI performance in FinFETs for low power applications

Type: Conference Paper

Author : Sachid, A.B. , Chenming Hu

Publisher: IEEE

Year: 2014

The operation of power MOSFET in reverse mode

Type: Journal Paper

Author : Min-hwa Chi; Chenming Hu

Year: 1983

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Body-bias effect in SOI FinFET for low-power applications: Gate length dependence

Type: Conference Paper

Author : Sachid, A.B. , Khandelwal, S. , Chenming Hu

Publisher: IEEE

Year: 2014

MOSFET Gate Oxide Reliability: Anode Hole Injection Model and its Applications

Type: Journal Paper

Author : Yee-Chia Yeo; Qiang Lu; Chenming Hu

Year: 2002

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A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation

Type: Journal Paper

Author : Mansun Chan; Hui, K.Y.; Chenming Hu; Ko, P.K.

Year: 1998

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Ferroelectric negative capacitance MOSFET: Capacitance tuning

Type: Journal Paper

Author : Asif I. Khan; Chun W. Yeung; Chenming Hu; Sayeef Salahuddin

Year: 2011

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MOSFET modeling & BSIM3 user’s guide

MOSFET Modeling and BSIM3 User's Guide

Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling

Hole injection SiO2 breakdown model for very low voltage lifetime extrapolation

Impact of channel doping on the device and NBTI performance in FinFETs for low power applications

The operation of power MOSFET in reverse mode

Body-bias effect in SOI FinFET for low-power applications: Gate length dependence

MOSFET Gate Oxide Reliability: Anode Hole Injection Model and its Applications

A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation

Ferroelectric negative capacitance MOSFET: Capacitance tuning

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MOSFET modeling & BSIM3 user’s guide

MOSFET Modeling and BSIM3 User's Guide

Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling

Hole injection SiO2 breakdown model for very low voltage lifetime extrapolation

Impact of channel doping on the device and NBTI performance in FinFETs for low power applications

The operation of power MOSFET in reverse mode

Body-bias effect in SOI FinFET for low-power applications: Gate length dependence

MOSFET Gate Oxide Reliability: Anode Hole Injection Model and its Applications

A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation

Ferroelectric negative capacitance MOSFET: Capacitance tuning