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نمایش تعداد 1-10 از 14

Total-Ionizing-Dose Response of Narrow, Long Channel 45 nm PDSOI Transistors

نوع: Journal Paper

نویسنده : Alles, Michael L.; Hughes, Harold L.; Ball, D.R.; McMarr, Patrick J.; Schrimpf, R.D.

ناشر: IEEE

سال: 2014

Dynamic Modeling of Radiation-Induced State Changes in <formula formulatype="inline"> <img src="/images/tex/21563.gif" alt="{\\hbox {HfO}_2}/\\hbox {Hf}"> </formula> 1T1R RRAM

نوع: Journal Paper

نویسنده : Bennett, W.G.; Hooten, N.C.; Schrimpf, R.D.; Reed, R.A.; Alles, Michael L.; En Xia Zhang; Weeden-Wright, Stephanie L.; Linten, D.; Jurczak, Malgorzata; Fantini, Andrea

ناشر: IEEE

سال: 2014

Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process

نوع: Journal Paper

نویسنده : Haeffner, T.D.; Loveless, T.D.; Zhang, E.X.; Sternberg, A.L.; Jagannathan, Sarangapani; Schrimpf, R.D.; Kauppila, J.S.; Alles, Michael L.; Fleetwood, D.M.; Massengill, Lloyd W.; Haddad, Nadim F.

ناشر: IEEE

سال: 2014

Heavy-Ion and Laser Induced Charge Collection in SiGe Channel <formula formulatype="inline"> <img src="/images/tex/21595.gif" alt="p{\\rm MOSFETs}"> </formula>

نوع: Journal Paper

نویسنده : En Xia Zhang; Samsel, I.K.; Hooten, N.C.; Bennett, W.G.; Funkhouser, Erik D.; Kai Ni; Ball, D.R.; McCurdy, Michael W.; Fleetwood, D.M.; Reed, R.A.; Alles, Michael L.; Schrimpf, R.D.; Linten, D.; Mitard, J.

ناشر: IEEE

سال: 2014

Single-Event Transient Response of InGaAs MOSFETs

نوع: Journal Paper

نویسنده : Kai Ni; En Xia Zhang; Hooten, N.C.; Bennett, W.G.; McCurdy, Michael W.; Sternberg, A.L.; Schrimpf, R.D.; Reed, R.A.; Fleetwood, D.M.; Alles, Michael L.; Tae-Woo Kim; Jianqiang Lin; del Alamo, Jesus /A/.

ناشر: IEEE

سال: 2014

Bias Dependence of Total Ionizing Dose Effects in SiGe-<formula formulatype="inline"> <img src="/images/tex/21594.gif" alt="{{\\rm SiO}_2}/{{\\rm HfO}_2} p"> </formula>MOS FinFETs

نوع: Journal Paper

نویسنده : Guo Xing Duan; Cher Xuan Zhang; En Xia Zhang; Hachtel, Jordan; Fleetwood, D.M.; Schrimpf, R.D.; Reed, R.A.; Alles, Michael L.; Pantelides, Sokrates T.; Bersuker, Gennadi; Young, Chadwin D.

ناشر: IEEE

سال: 2014

Single- and Multiple-Event Induced Upsets in <formula formulatype="inline"> <img src="/images/tex/21256.gif" alt="{\\rm HfO}_2/{\\rm Hf}"> </formula> 1T1R RRAM

نوع: Journal Paper

نویسنده : Bennett, W.G.; Hooten, N.C.; Schrimpf, R.D.; Reed, R.A.; Mendenhall, Marcus H.; Alles, Michael L.; Jinshun Bi; En Xia Zhang; Linten, D.; Jurzak, Malgorzata; Fantini, Andrea

ناشر: IEEE

سال: 2014

State and Angular Dependence of Single-Event Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors

نوع: Journal Paper

نویسنده : Alles, Michael L.; Schrimpf, R.D.; Massengill, Lloyd W.; Ball, D.R.; Kelly, Andrew T.; Haddad, Nadim F.; Rodgers, John C.; Ross, Jason F.; Chan, Erwin Hoi Wing; Raman, Ashok; Turowski, Marek

ناشر: IEEE

سال: 2014

Geometry Dependence of Total-Dose Effects in Bulk FinFETs

نوع: Journal Paper

نویسنده : Chatterjee, I.; Zhang, E.X.; Bhuva, B.L.; Reed, R.A.; Alles, Michael L.; Mahatme, N.N.; Ball, D.R.; Schrimpf, R.D.; Fleetwood, D.M.; Linten, D.; Simoen, Eddy; Mitard, J.; Claeys, Cor

ناشر: IEEE

سال: 2014

Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices

نوع: Journal Paper

نویسنده : Cher Xuan Zhang; Bin Wang; Guo Xing Duan; En Xia Zhang; Fleetwood, D.M.; Alles, Michael L.; Schrimpf, R.D.; Rooney, Aidan P.; Khestanova, Ekaterina; Auton, Gregory; Gorbachev, Roman V.; Haigh, Sarah J.; Pantelides, Sokrates T.

ناشر: IEEE

سال: 2014

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Total-Ionizing-Dose Response of Narrow, Long Channel 45 nm PDSOI Transistors

Dynamic Modeling of Radiation-Induced State Changes in <formula formulatype="inline"> <img src="/images/tex/21563.gif" alt="{\\hbox {HfO}_2}/\\hbox {Hf}"> </formula> 1T1R RRAM

Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process

Heavy-Ion and Laser Induced Charge Collection in SiGe Channel <formula formulatype="inline"> <img src="/images/tex/21595.gif" alt="p{\\rm MOSFETs}"> </formula>

Single-Event Transient Response of InGaAs MOSFETs

Bias Dependence of Total Ionizing Dose Effects in SiGe-<formula formulatype="inline"> <img src="/images/tex/21594.gif" alt="{{\\rm SiO}_2}/{{\\rm HfO}_2} p"> </formula>MOS FinFETs

Single- and Multiple-Event Induced Upsets in <formula formulatype="inline"> <img src="/images/tex/21256.gif" alt="{\\rm HfO}_2/{\\rm Hf}"> </formula> 1T1R RRAM

State and Angular Dependence of Single-Event Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors

Geometry Dependence of Total-Dose Effects in Bulk FinFETs

Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices

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Total-Ionizing-Dose Response of Narrow, Long Channel 45&#x00A0;nm PDSOI Transistors

Dynamic Modeling of Radiation-Induced State Changes in <formula formulatype="inline"> <img src="/images/tex/21563.gif" alt="{\\hbox {HfO}_2}/\\hbox {Hf}"> </formula> 1T1R RRAM

Irradiation and Temperature Effects for a 32&#x00A0;nm RF Silicon-on-Insulator CMOS Process

Heavy-Ion and Laser Induced Charge Collection in SiGe Channel <formula formulatype="inline"> <img src="/images/tex/21595.gif" alt="p{\\rm MOSFETs}"> </formula>

Single-Event Transient Response of InGaAs MOSFETs

Bias Dependence of Total Ionizing Dose Effects in SiGe-<formula formulatype="inline"> <img src="/images/tex/21594.gif" alt="{{\\rm SiO}_2}/{{\\rm HfO}_2} p"> </formula>MOS FinFETs

Single- and Multiple-Event Induced Upsets in <formula formulatype="inline"> <img src="/images/tex/21256.gif" alt="{\\rm HfO}_2/{\\rm Hf}"> </formula> 1T1R RRAM

State and Angular Dependence of Single-Event Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors

Geometry Dependence of Total-Dose Effects in Bulk FinFETs

Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices

Total-Ionizing-Dose Response of Narrow, Long Channel 45 nm PDSOI Transistors

Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process