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نمایش تعداد 1-9 از 9

Field effect transistors: From mosfet to Tunnel-Fet analog performance perspective

نوع: Conference Paper

نویسنده : Martino, J.A.; Agopian, P.G.D.; Simoen, E.; Claeys, C.

ناشر: IEEE

سال: 2014

Graphene for advanced devices applications

نوع: Conference Paper

نویسنده : Sivieri, V.B.; Wessely, P.J.; Schwalke, U.; Agopian, P.G.D.; Martino, J.A.

ناشر: IEEE

سال: 2014

Drain induced barrier thinning on TFETs with different source/drain engineering

نوع: Conference Paper

نویسنده : Martino, M.D.V.; Martino, J.A.; Agopian, P.G.D.

ناشر: IEEE

سال: 2014

Comparison of analog performance between SOI and Bulk pFinFET

نوع: Conference Paper

نویسنده : Oliveira, A.V.; Agopian, P.G.D.; Simoen, E.; Claeys, C.; Martino, J.A.

ناشر: IEEE

سال: 2014

Fin width influence on analog performance of SOI and bulk FINFETs

نوع: Conference Paper

نویسنده : Oliveira, A.V.; Agopian, P.G.D.; Martino, J.A.; Simoen, E.; Claeys, C.

ناشر: IEEE

سال: 2014

Unity gain frequency on FinFET and TFET devices

نوع: Conference Paper

نویسنده : Agopian, P.G.D.; Martino, J.A.; Vandooren, A.; Rooyackers, R.; Simoen, E.; Thean, A.; Claeys, C.

ناشر: IEEE

سال: 2014

The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters

نوع: Conference Paper

نویسنده : Bordallo, C.C.M.; Teixeira, F.F.; Silveira, M.A.G.; Martino, J.A.; Agopian, P.G.D.; Simoen, E.; Claeys, C.

ناشر: IEEE

سال: 2014

Early voltage and intrinsic voltage gain in vertical nanowire-TFETs as a function of temperature

نوع: Conference Paper

نویسنده : Martino, M.D.V.; Neves, F.S.; Agopian, P.G.D.; Martino, J.A.; Vandooren, A.; Rooyackers, R.; Simoen, E.; Thean, A.; Claeys, C.

ناشر: IEEE

سال: 2014

The effect of X-Ray radiation on DIBL for standard and strained triple-gate SOI MuGFETs

نوع: Conference Paper

نویسنده : Bordallo, C.C.M.; Teixeira, F.F.; Silveira, M.A.G.; Martino, J.A.; Agopian, P.G.D.; Simoen, E.; Claeys, C.

ناشر: IEEE

سال: 2014

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Field effect transistors: From mosfet to Tunnel-Fet analog performance perspective

Graphene for advanced devices applications

Drain induced barrier thinning on TFETs with different source/drain engineering

Comparison of analog performance between SOI and Bulk pFinFET

Fin width influence on analog performance of SOI and bulk FINFETs

Unity gain frequency on FinFET and TFET devices

The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters

Early voltage and intrinsic voltage gain in vertical nanowire-TFETs as a function of temperature

The effect of X-Ray radiation on DIBL for standard and strained triple-gate SOI MuGFETs

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Field effect transistors: From mosfet to Tunnel-Fet analog performance perspective

Graphene for advanced devices applications

Drain induced barrier thinning on TFETs with different source/drain engineering

Comparison of analog performance between SOI and Bulk pFinFET

Fin width influence on analog performance of SOI and bulk FINFETs

Unity gain frequency on FinFET and TFET devices

The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters

Early voltage and intrinsic voltage gain in vertical nanowire-TFETs as a function of temperature

The effect of X-Ray radiation on DIBL for standard and strained triple-gate SOI MuGFETs