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نمایش تعداد 1-4 از 4

AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation

نوع: Journal Paper

نویسنده : Yafune, N.; Hashimoto, Shuji; Akita, K.; Yamamoto, Yusaku; Tokuda, Hirokuni; Kuzuhara, Masaaki

ناشر: IET

سال: 2014

Complementary metal-oxide semiconductor doherty power amplifier based on voltage combining method

نوع: Journal Paper

نویسنده : Chenxi Zhao; Byungjoon Park; Bumman Kim

ناشر: IET

سال: 2014

High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

نوع: Journal Paper

نویسنده : Zhe Xu; Jinyan Wang; Yong Cai; Jingqian Liu; Zhen Yang; Xiaoping Li; Maojun Wang; Min Yu; Bing Xie; Wengang Wu; Xiaohua Ma; Jincheng Zhang; Yue Hao

ناشر: IEEE

سال: 2014

Multi-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS

نوع: Journal Paper

نویسنده : Agah, A.; Jayamon, Jefy Alex; Asbeck, P.M.; Larson, Lawrence E.; Buckwalter, James F.

ناشر: IEEE

سال: 2014

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AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation

Complementary metal-oxide semiconductor doherty power amplifier based on voltage combining method

High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

Multi-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS

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AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation

Complementary metal-oxide semiconductor doherty power amplifier based on voltage combining method

High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

Multi-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS