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    A Novel Double Gate Tunnel Field Effect Transistor with 9 mV/dec Average Subthreshold Slope 

    Type: Conference Paper
    Author : سعید مرجانی; سید ابراهیم حسینی; saeid marjani; Seyed Ebrahim Hosseini
    Year: 2014
    Abstract:

    ×1012) and an average subthreshold slope of about 9 mV/decade over 4 decades of current at room temperature. Results suggest that, the DGTFET with p+-layer in the channel seem to be the most optimal ones to replace MOSFET for ultralow power applications and switching...

    New trends in content delivery networks 

    Type: Conference Paper
    Author : Kadlic, R. , Blichar, J. , Podhradsky, P.
    Publisher: IEEE
    Year: 2014

    Integrated design and control of hypersonic vehicles 

    Type: Conference Paper
    Publisher: IEEE
    Year: 2014

    An approach for scalable parallel execution of ant algorithms 

    Type: Conference Paper
    Publisher: IEEE
    Year: 2014

    A new extraction method of extrinsic elements of GaAs/GaN HEMTs 

    Type: Conference Paper
    Author : Andong Huang; Zheng Zhong; Yongxin Guo; Wen Wu
    Publisher: IEEE
    Year: 2014

    Substrate Bias Influence on the Operation of Junctionless Nanowire Transistors 

    Type: Journal Paper
    Author : Trevisoli, R.; Trevisoli Doria, Rodrigo; de Souza, M.; Pavanello, Marcelo Antonio
    Publisher: IEEE
    Year: 2014

    Rapid labelling of SCADA data to extract transparent rules using RIPPER 

    Type: Conference Paper
    Author : Godwin, J.L. , Matthews, P.
    Publisher: IEEE
    Year: 2014

    SLA-Based Profit Optimization in Cloud Bursting PaaS 

    Type: Conference Paper
    Author : Dib, D. , Parlavantzas, N. , Morin, C.
    Publisher: IEEE
    Year: 2014

    Nighttime Vehicle Detection at Close Range Using Vehicle Lamps Information 

    Type: Conference Paper
    Publisher: IEEE
    Year: 2014

    Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current 

    Type: Journal Paper
    Author : Beneventi, Giovanni Betti; Gnani, Elena; Gnudi, A.; Reggiani, S.; Baccarani, G.
    Publisher: IEEE
    Year: 2014
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