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نمایش تعداد 1-10 از 288

State-restrict MLC STT-RAM designs for high-reliable high-performance memory system

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Variable-Range Hopping and Thermal Activation Conduction of Y-Doped ZnO Nanocrystalline Films

نوع: Journal Paper

نویسنده : Lin, Tyrone T.; Young, S.L.; Kung, C.Y.; Chen, H.Z.; Kao, M.C.; Chang, M.C.; Ou, C.R.

ناشر: IEEE

سال: 2014

Leveraging Silicon Epitaxy to Fabricate Excellent Front Surface Regions for Thin Interdigitated Back Contact Solar Cells

نوع: Journal Paper

نویسنده : Baker-Finch, Simeon C.; Basore, Paul /A/.

ناشر: IEEE

سال: 2014

Analysis of Junction Leakage Current Failure of Nickel Silicide Abnormal Growth Using Advanced Transmission Electron Microscopy

نوع: Journal Paper

نویسنده : Kudo, S.; Hirose, Y.; Yamaguchi, Toru; Kashihara, K.; Maekawa, Keiichi; Asai, Kikuo; Murata, Norio; Katayama, Takeo; Asayama, K.; Hattori, Nobuyuki; Koyama, Tomofumi; Nakamae, Koji

ناشر: IEEE

سال: 2014

Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains

نوع: Journal Paper

نویسنده : Kutsukake, Kentaro; Usami, Noritaka; Ohno, Y.; Tokumoto, Yuki; Yonenaga, Ichiro

ناشر: IEEE

سال: 2014

Germanium Gate PhotoMOSFET Integrated to Silicon Photonics

نوع: Journal Paper

نویسنده : Going, Ryan W.; Loo, Jonathan; Tsu-Jae King Liu; Wu, Ming C.

ناشر: IEEE

سال: 2014

THz Difference-Frequency Generation in MOVPE-Grown Quantum Cascade Lasers

نوع: Journal Paper

نویسنده : Vijayraghavan, Karun; Min Jang; Aiting Jiang; Xiaojun Wang; Troccoli, Mariano; Belkin, Mikhail /A/.

ناشر: IEEE

سال: 2014

3.7 kV Vertical GaN PN Diodes

نوع: Journal Paper

نویسنده : Kizilyalli, Isik C.; Edwards, Andrew P.; Nie, Hui; Bour, David; Prunty, Thomas; Disney, Don

ناشر: IEEE

سال: 2014

Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells

نوع: Journal Paper

نویسنده : Fabien, Chloe /A/. M.; Moseley, Michael; Gunning, Brendan; Doolittle, W. Alan; Fischer, A.M.; Wei, Yong O.; Ponce, F.A.

ناشر: IEEE

سال: 2014

Electrical Characteristics and Deep Traps Spectra of Undoped GaN Films Grown on Si Using Different Strain-Relieving Buffer Types

نوع: Journal Paper

نویسنده : Polyakov, A.Y.; Smirnov, N.B.; Cheong Hyun Roh; Cheol-Koo Hahn; Han-Su Cho; Kozhukhova, Elena /A/.; Govorkov, A.V.; Ryzhuk, Roman Valerievich; Kargin, Nikolay Ivanovich; In-Hwan Lee

ناشر: IEEE

سال: 2014

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State-restrict MLC STT-RAM designs for high-reliable high-performance memory system

Variable-Range Hopping and Thermal Activation Conduction of Y-Doped ZnO Nanocrystalline Films

Leveraging Silicon Epitaxy to Fabricate Excellent Front Surface Regions for Thin Interdigitated Back Contact Solar Cells

Analysis of Junction Leakage Current Failure of Nickel Silicide Abnormal Growth Using Advanced Transmission Electron Microscopy

Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains

Germanium Gate PhotoMOSFET Integrated to Silicon Photonics

THz Difference-Frequency Generation in MOVPE-Grown Quantum Cascade Lasers

3.7 kV Vertical GaN PN Diodes

Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells

Electrical Characteristics and Deep Traps Spectra of Undoped GaN Films Grown on Si Using Different Strain-Relieving Buffer Types

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State-restrict MLC STT-RAM designs for high-reliable high-performance memory system

Variable-Range Hopping and Thermal Activation Conduction of Y-Doped ZnO Nanocrystalline Films

Leveraging Silicon Epitaxy to Fabricate Excellent Front Surface Regions for Thin Interdigitated Back Contact Solar Cells

Analysis of Junction Leakage Current Failure of Nickel Silicide Abnormal Growth Using Advanced Transmission Electron Microscopy

Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains

Germanium Gate PhotoMOSFET Integrated to Silicon Photonics

THz Difference-Frequency Generation in MOVPE-Grown Quantum Cascade Lasers

3.7 kV Vertical GaN PN Diodes

Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells

Electrical Characteristics and Deep Traps Spectra of Undoped GaN Films Grown on Si Using Different Strain-Relieving Buffer Types