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Now showing items 1-10 of 17

Novel sampling algorithm for Levy-walk based mobile phone sensing

Type: Conference Paper

Author : Thejaswini, M. , Rajalakshmi, P. , Desai, U.B.

Publisher: IEEE

Year: 2014

Degradations of Threshold Voltage, Mobility, and Drain Current and the Dependence on Transistor Geometry For Stressing at 77 K and 300 K

Type: Journal Paper

Author : Guoying Wu; Deptuch, Grzegorz W.; Hoff, Jim R.; Ping Gui

Publisher: IEEE

Year: 2014

nMOS Short Channel Device Characteristics After Soft Oxide Breakdown and Implications for Reliability Projections and Circuits

Type: Journal Paper

Author : Nicollian, Paul E.; Min Chen; Yang Yang; Chancellor, Cathy /A/.; Reddy, Viswanath K.

Publisher: IEEE

Year: 2014

A context-aware matching game for user association in wireless small cell networks

Type: Conference Paper

Author : Namvar, N. , Saad, W. , Maham, B. , Valentin, S.

Publisher: IEEE

Year: 2014

A comparison of the properties of helical type antennas when fed as a twin arm balanced pair

Type: Conference Paper

Author : Brister, J.A.; Edwards, R.M.

Publisher: IEEE

Year: 2014

Mobile real-time arousal detection

Type: Conference Paper

Author : Alexandratos, V. , Bulut, M. , Jasinschi, R.

Publisher: IEEE

Year: 2014

Analysis of quality factor of quartz-crystal tuning fork fabricated by etching process

Type: Conference Paper

Author : Itoh, H.

Publisher: IEEE

Year: 2014

Room to High Temperature Measurements of Flexible SOI FinFETs With Sub-20-nm Fins

Type: Journal Paper

Author : Diab, A.; Torres Sevilla, G.A.; Cristoloveanu, S.; Hussain, M.M.

Publisher: IEEE

Year: 2014

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO<sub><italic>x</italic></sub>/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Type: Journal Paper

Author : Rui Zhang; Xiao Yu; Takenaka, Mitsuru; Takagi, Shinichi

Publisher: IEEE

Year: 2014

A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect

Type: Journal Paper

Author : Wei Cao; Jiahao Kang; Wei Liu; Banerjee, K.

Publisher: IEEE

Year: 2014

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Novel sampling algorithm for Levy-walk based mobile phone sensing

Degradations of Threshold Voltage, Mobility, and Drain Current and the Dependence on Transistor Geometry For Stressing at 77 K and 300 K

nMOS Short Channel Device Characteristics After Soft Oxide Breakdown and Implications for Reliability Projections and Circuits

A context-aware matching game for user association in wireless small cell networks

A comparison of the properties of helical type antennas when fed as a twin arm balanced pair

Mobile real-time arousal detection

Analysis of quality factor of quartz-crystal tuning fork fabricated by etching process

Room to High Temperature Measurements of Flexible SOI FinFETs With Sub-20-nm Fins

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO<sub><italic>x</italic></sub>/Ge MOS Interfaces Fabricated by Plasma Postoxidation

A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect

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Novel sampling algorithm for Levy-walk based mobile phone sensing

Degradations of Threshold Voltage, Mobility, and Drain Current and the Dependence on Transistor Geometry For Stressing at 77 K and 300 K

nMOS Short Channel Device Characteristics After Soft Oxide Breakdown and Implications for Reliability Projections and Circuits

A context-aware matching game for user association in wireless small cell networks

A comparison of the properties of helical type antennas when fed as a twin arm balanced pair

Mobile real-time arousal detection

Analysis of quality factor of quartz-crystal tuning fork fabricated by etching process

Room to High Temperature Measurements of Flexible SOI FinFETs With Sub-20-nm Fins

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO<sub><italic>x</italic></sub>/Ge MOS Interfaces Fabricated by Plasma Postoxidation

A Compact Current&#x2013;Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect

A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect