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نمایش تعداد 1-10 از 10

Dual-Function Gate Driver for a Power Module With SiC Junction Field-Effect Transistors

نوع: Journal Paper

نویسنده : Colmenares, Juan; Peftitsis, Dimosthenis; Rabkowski, Jacek; Sadik, Diane-Perle; Nee, H.-P.

ناشر: IEEE

سال: 2014

Self-Powered Gate Driver for Normally-ON SiC JFETs: Design Considerations and System Limitations

نوع: Journal Paper

نویسنده : Peftitsis, Dimosthenis; Rabkowski, Jacek; Nee, H.-P.

ناشر: IEEE

سال: 2014

Design and Evaluation of Reduced Self-Capacitance Inductor in DC/DC Converters with Fast-Switching SiC Transistors

نوع: Journal Paper

نویسنده : Zdanowski, Mariusz; Kostov, Konstantin; Rabkowski, Jacek; Barlik, Roman; Nee, H.-P.

ناشر: IEEE

سال: 2014

A 200 °C Safety System at Power-Up of Normally On SiC JFETs Inverters

نوع: Journal Paper

نویسنده : Risaletto, Damien; Bergogne, Dominique; Dubois, Fabien; Morel, Herve; Allard, Bruno; Meuret, Regis

ناشر: IEEE

سال: 2014

600 V Diamond Junction Field-Effect Transistors Operated at 200<formula formulatype="inline"> <img src="/images/tex/16753.gif" alt="^{\\circ}{\\rm C}"> </formula>

نوع: Journal Paper

نویسنده : Iwasaki, Takuya; Yaita, Junya; Kato, Haruhisa; Makino, Tatsuya; Ogura, M.; Takeuchi, D.; Okushi, H.; Yamasaki, Shintaro; Hatano, M.

ناشر: IEEE

سال: 2014

An Experimental Evaluation of SiC Switches in Soft-Switching Converters

نوع: Journal Paper

نویسنده : Ranstad, Per; Nee, H.-P.; Linner, J.; Peftitsis, Dimosthenis

ناشر: IEEE

سال: 2014

Analysis and Experimental Verification of the Influence of Fabrication Process Tolerances and Circuit Parasitics on Transient Current Sharing of Parallel-Connected SiC JFETs

نوع: Journal Paper

نویسنده : Jang-Kwon Lim; Peftitsis, Dimosthenis; Rabkowski, Jacek; Bakowski, Mietek; Nee, H.-P.

ناشر: IEEE

سال: 2014

Design and Performances of 4H-SiC Bipolar Mode Field Effect Transistor (BMFETs)

نوع: Journal Paper

نویسنده : Bellone, Salvatore; Di Benedetto, Luigi

ناشر: IEEE

سال: 2014

Application dependency tracing for message oriented middleware

نوع: Conference Paper

نویسنده : Wu, Li-Juin; Li, Hong-Wei; Cheng, Yu-Jui; Wu, Yu-Sung; Lin, Houcheng

ناشر: IEEE

سال: 2014

4H-SiC N-Channel JFET for Operation in High-Temperature Environments

نوع: Journal Paper

نویسنده : Wei-Chen Lien; Damrongplasit, Nattapol; Paredes, John H.; Senesky, Debbie G.; Liu, T.-J King; Pisano, Albert P.

ناشر: IEEE

سال: 2014

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Dual-Function Gate Driver for a Power Module With SiC Junction Field-Effect Transistors

Self-Powered Gate Driver for Normally-ON SiC JFETs: Design Considerations and System Limitations

Design and Evaluation of Reduced Self-Capacitance Inductor in DC/DC Converters with Fast-Switching SiC Transistors

A 200 °C Safety System at Power-Up of Normally On SiC JFETs Inverters

600 V Diamond Junction Field-Effect Transistors Operated at 200<formula formulatype="inline"> <img src="/images/tex/16753.gif" alt="^{\\circ}{\\rm C}"> </formula>

An Experimental Evaluation of SiC Switches in Soft-Switching Converters

Analysis and Experimental Verification of the Influence of Fabrication Process Tolerances and Circuit Parasitics on Transient Current Sharing of Parallel-Connected SiC JFETs

Design and Performances of 4H-SiC Bipolar Mode Field Effect Transistor (BMFETs)

Application dependency tracing for message oriented middleware

4H-SiC N-Channel JFET for Operation in High-Temperature Environments

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Dual-Function Gate Driver for a Power Module With SiC Junction Field-Effect Transistors

Self-Powered Gate Driver for Normally-ON SiC JFETs: Design Considerations and System Limitations

Design and Evaluation of Reduced Self-Capacitance Inductor in DC/DC Converters with Fast-Switching SiC Transistors

A 200 &#x00B0;C Safety System at Power-Up of Normally On SiC JFETs Inverters

600 V Diamond Junction Field-Effect Transistors Operated at 200<formula formulatype="inline"> <img src="/images/tex/16753.gif" alt="^{\\circ}{\\rm C}"> </formula>

An Experimental Evaluation of SiC Switches in Soft-Switching Converters

Analysis and Experimental Verification of the Influence of Fabrication Process Tolerances and Circuit Parasitics on Transient Current Sharing of Parallel-Connected SiC JFETs

Design and Performances of 4H-SiC Bipolar Mode Field Effect Transistor (BMFETs)

Application dependency tracing for message oriented middleware

4H-SiC N-Channel JFET for Operation in High-Temperature Environments

A 200 °C Safety System at Power-Up of Normally On SiC JFETs Inverters