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نمایش تعداد 1-10 از 12

Single Event Hard Errors in SRAM Under Heavy Ion Irradiation

نوع: Journal Paper

نویسنده : Haran, Avner; Barak, Joseph; David, David; Keren, Eitan; Refaeli, Nati; Rapaport, Shimshon

ناشر: IEEE

سال: 2014

SET Tolerance of 65 nm CMOS Majority Voters: A Comparative Study

نوع: Journal Paper

نویسنده : Danilov, Igor /A/.; Gorbunov, Maxim S.; Antonov, A.A.

ناشر: IEEE

سال: 2014

Analysis study of sensitive volume and triggering criteria of single-event burnout in super-junction metal-oxide semiconductor field-effect transistors

نوع: Journal Paper

نویسنده : Zerarka, Moustafa; Austin, Patrick; Morancho, Frederic; Isoird, K.; Arbess, Houssam; Tasselli, Josiane

ناشر: IET

سال: 2014

Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions

نوع: Journal Paper

نویسنده : Kobayashi, Daiki; Kakehashi, Yuya; Hirose, Keikichi; Onoda, S.; Makino, Tatsuya; Ohshima, T.; Ikeda, Shoji; Yamanouchi, Masato; Sato, Hikaru; Enobio, Eli Christopher; Endoh, Tetsuo; Ohno, Hideo

ناشر: IEEE

سال: 2014

Single-Event Transient Response of InGaAs MOSFETs

نوع: Journal Paper

نویسنده : Kai Ni; En Xia Zhang; Hooten, N.C.; Bennett, W.G.; McCurdy, Michael W.; Sternberg, A.L.; Schrimpf, R.D.; Reed, R.A.; Fleetwood, D.M.; Alles, Michael L.; Tae-Woo Kim; Jianqiang Lin; del Alamo, Jesus /A/.

ناشر: IEEE

سال: 2014

On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive Operating Area Determination

نوع: Journal Paper

نویسنده : Privat, A.; Touboul, A.D.; Michez, A.; Bourdarie, S.; Vaille, J.R.; Wrobel, F.; Chatry, N.; Chaumont, G.; Lorfevre, E.; Bezerra, F.; Saigne, F.

ناشر: IEEE

سال: 2014

Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs

نوع: Journal Paper

نویسنده : Mizuta, Eiichi; Kuboyama, Satoshi; Abe, H.; Iwata, Yoshiyuki; Tamura, Takuya

ناشر: IEEE

سال: 2014

Bad Smells in Software Product Lines: A Systematic Review

نوع: Conference Paper

نویسنده : Vale, G.; Figueiredo, E.; Abilio, R.; Costa, H.

ناشر: IEEE

سال: 2014

Dynamic Test Methods for COTS SRAMs

نوع: Journal Paper

نویسنده : Tsiligiannis, G.; Dilillo, L.; Gupta, V.; Bosio, A.; Girard, P.; Virazel, A.; Puchner, H.; Bosser, Alexandre; Javanainen, Arto; Virtanen, Ari; Frost, Christopher; Wrobel, F.; Dusseau, L.; Saigne, F.

ناشر: IEEE

سال: 2014

Single-Event Cluster Multibit Upsets Due to Localized Latch-Up in a 90 nm COTS SRAM Containing SEL Mitigation Design

نوع: Journal Paper

نویسنده : Luo Yin-Hong; Zhang Feng-Qi; Guo Hong-Xia; Zhou Hui; Zheng Li-Sang; Ji Dong-Mei; Shen Chen; Gong Ding; Hajdas, Wojtek

ناشر: IEEE

سال: 2014

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Single Event Hard Errors in SRAM Under Heavy Ion Irradiation

SET Tolerance of 65 nm CMOS Majority Voters: A Comparative Study

Analysis study of sensitive volume and triggering criteria of single-event burnout in super-junction metal-oxide semiconductor field-effect transistors

Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions

Single-Event Transient Response of InGaAs MOSFETs

On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive Operating Area Determination

Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs

Bad Smells in Software Product Lines: A Systematic Review

Dynamic Test Methods for COTS SRAMs

Single-Event Cluster Multibit Upsets Due to Localized Latch-Up in a 90 nm COTS SRAM Containing SEL Mitigation Design

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Single Event Hard Errors in SRAM Under Heavy Ion Irradiation

SET Tolerance of 65&#x00A0;nm CMOS Majority Voters: A Comparative Study

Analysis study of sensitive volume and triggering criteria of single-event burnout in super-junction metal-oxide semiconductor field-effect transistors

Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions

Single-Event Transient Response of InGaAs MOSFETs

On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive Operating Area Determination

Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs

Bad Smells in Software Product Lines: A Systematic Review

Dynamic Test Methods for COTS SRAMs

Single-Event Cluster Multibit Upsets Due to Localized Latch-Up in a 90&#x00A0;nm COTS SRAM Containing SEL Mitigation Design

SET Tolerance of 65 nm CMOS Majority Voters: A Comparative Study

Single-Event Cluster Multibit Upsets Due to Localized Latch-Up in a 90 nm COTS SRAM Containing SEL Mitigation Design