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نمایش تعداد 1-10 از 28

Influence of Mechanical Bending on Flexible InGaZnO-Based Ferroelectric Memory TFTs

نوع: Journal Paper

نویسنده : Petti, L.; Munzenrieder, N.; Salvatore, G.A.; Zysset, Christoph; Kinkeldei, Thomas; Buthe, L.; Troster, G.

ناشر: IEEE

سال: 2014

Stability Constraints Define the Minimum Subthreshold Swing of a Negative Capacitance Field-Effect Transistor

نوع: Journal Paper

نویسنده : Jain, Abhishek; Alam, Md. Ashraful

ناشر: IEEE

سال: 2014

Gate Bias Stress-Induced Threshold Voltage Shift Effect of a-IGZO TFTs with Cu Gate

نوع: Journal Paper

نویسنده : Xiang Liu; Wang, L.L.; Ce Ning; Hehe Hu; Wei Yang; Ke Wang; Seong Yeol Yoo; Shengdong Zhang

ناشر: IEEE

سال: 2014

Carbon Nanotube Nonvolatile Thin-Film Transistors With (Bi,Nd)4Ti3O12 Gate Insulators

نوع: Journal Paper

نویسنده : Qiuhong Tan; Jinbin Wang; Xiangli Zhong; Qianjin Wang; Yingkai Liu; Junsheng Shi; Shaoquan Jiang

ناشر: IEEE

سال: 2014

A Detailed Study of Gate Insulator Process Dependence of NBTI Using a Compact Model

نوع: Journal Paper

نویسنده : Joshi, Kishor; Mukhopadhyay, Saibal; Goel, Nishith; Nanware, Nirmal; Mahapatra, Santanu

ناشر: IEEE

سال: 2014

4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC <formula formulatype="inline"> <img src="/images/tex/21407.gif" alt="(11\\bar{2}0)"> </formula>

نوع: Journal Paper

نویسنده : Horita, Masahiro; Noborio, Masato; Kimoto, Tatsuya; Suda, Jun

ناشر: IEEE

سال: 2014

Real-time thermal monitoring of power semiconductors in power electronics using linear parameter-varying models for variable coolant flow situations

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Shifting the fixed-frequency beam scanning range of a leaky-wave antenna by slot loading

نوع: Conference Paper

نویسنده : Karmokar, D.K. , Esselle, K.P. , Hay, S.G.

ناشر: IEEE

سال: 2014

Proposal of a Hysteresis-Free Zero Subthreshold Swing Field-Effect Transistor

نوع: Journal Paper

نویسنده : Jain, Abhishek; Alam, Md. Ashraful

ناشر: IEEE

سال: 2014

A Diamond:H/MoO3 MOSFET

نوع: Journal Paper

نویسنده : Vardi, Alon; Tordjman, Maurice; del Alamo, Jesus /A/.; Kalish, Rafi

ناشر: IEEE

سال: 2014

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Influence of Mechanical Bending on Flexible InGaZnO-Based Ferroelectric Memory TFTs

Stability Constraints Define the Minimum Subthreshold Swing of a Negative Capacitance Field-Effect Transistor

Gate Bias Stress-Induced Threshold Voltage Shift Effect of a-IGZO TFTs with Cu Gate

Carbon Nanotube Nonvolatile Thin-Film Transistors With (Bi,Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> Gate Insulators

A Detailed Study of Gate Insulator Process Dependence of NBTI Using a Compact Model

4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC <formula formulatype="inline"> <img src="/images/tex/21407.gif" alt="(11\\bar{2}0)"> </formula>

Real-time thermal monitoring of power semiconductors in power electronics using linear parameter-varying models for variable coolant flow situations

Shifting the fixed-frequency beam scanning range of a leaky-wave antenna by slot loading

Proposal of a Hysteresis-Free Zero Subthreshold Swing Field-Effect Transistor

A Diamond:H/MoO<sub>3</sub> MOSFET

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Influence of Mechanical Bending on Flexible InGaZnO-Based Ferroelectric Memory TFTs

Stability Constraints Define the Minimum Subthreshold Swing of a Negative Capacitance Field-Effect Transistor

Gate Bias Stress-Induced Threshold Voltage Shift Effect of a-IGZO TFTs with Cu Gate

Carbon Nanotube Nonvolatile Thin-Film Transistors With (Bi,Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> Gate Insulators

A Detailed Study of Gate Insulator Process Dependence of NBTI Using a Compact Model

4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC <formula formulatype="inline"> <img src="/images/tex/21407.gif" alt="(11\\bar{2}0)"> </formula>

Real-time thermal monitoring of power semiconductors in power electronics using linear parameter-varying models for variable coolant flow situations

Shifting the fixed-frequency beam scanning range of a leaky-wave antenna by slot loading

Proposal of a Hysteresis-Free Zero Subthreshold Swing Field-Effect Transistor

A Diamond:H/MoO<sub>3</sub> MOSFET