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Modeling cache coherence misses on multicores

نوع: Conference Paper

نویسنده : Xiaoyue Pan , Jonsson, B.

ناشر: IEEE

سال: 2014

Improving Self-Heating Effect and Maximum Power Density in SOI MESFETs by Using the Hole’s Well Under Channel

نوع: Journal Paper

نویسنده : Ramezani, Zahra; Orouji, Ali Asghar

ناشر: IEEE

سال: 2014

Anomalous drain-induced barrier lowering effect of thin-film transistors due to capacitive coupling voltage of light-shield metal

نوع: Journal Paper

نویسنده : Miryeon Kim; Hyungsoon Shin

ناشر: IET

سال: 2014

Improvement of RF Performance by Using Tunnel Diode Body Contact Structure in PD SOI nMOSFETs

نوع: Journal Paper

نویسنده : Kai Lu; Jing Chen; Jiexin Luo; Jun Liu; Qingqing Wu; Zhan Chai; Xi Wang

ناشر: IEEE

سال: 2014

Total Dose Effects in Tunnel-Diode Body-Contact SOI <formula formulatype="inline"> <img src="/images/tex/388.gif" alt="n"> </formula>MOSFETs

نوع: Journal Paper

نویسنده : Jiexin Luo; Jing Chen; Zhan Chai; Kai Lu; Weiwei He; Yan Yang; En Xia Zhang; Fleetwood, D.M.; Xi Wang

ناشر: IEEE

سال: 2014

Multifunction Behavior of a Vertical MOSFET With Trench Body Structure and New Erase Mechanism for Use in 1T-DRAM

نوع: Journal Paper

نویسنده : Jyi-Tsong Lin; Po-Hsieh Lin

ناشر: IEEE

سال: 2014

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Modeling cache coherence misses on multicores

Improving Self-Heating Effect and Maximum Power Density in SOI MESFETs by Using the Hole’s Well Under Channel

Anomalous drain-induced barrier lowering effect of thin-film transistors due to capacitive coupling voltage of light-shield metal

Improvement of RF Performance by Using Tunnel Diode Body Contact Structure in PD SOI nMOSFETs

Total Dose Effects in Tunnel-Diode Body-Contact SOI <formula formulatype="inline"> <img src="/images/tex/388.gif" alt="n"> </formula>MOSFETs

Multifunction Behavior of a Vertical MOSFET With Trench Body Structure and New Erase Mechanism for Use in 1T-DRAM

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Modeling cache coherence misses on multicores

Improving Self-Heating Effect and Maximum Power Density in SOI MESFETs by Using the Hole&#x2019;s Well Under Channel

Anomalous drain-induced barrier lowering effect of thin-film transistors due to capacitive coupling voltage of light-shield metal

Improvement of RF Performance by Using Tunnel Diode Body Contact Structure in PD SOI nMOSFETs

Total Dose Effects in Tunnel-Diode Body-Contact SOI <formula formulatype="inline"> <img src="/images/tex/388.gif" alt="n"> </formula>MOSFETs

Multifunction Behavior of a Vertical MOSFET With Trench Body Structure and New Erase Mechanism for Use in 1T-DRAM

Improving Self-Heating Effect and Maximum Power Density in SOI MESFETs by Using the Hole’s Well Under Channel