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600 V Diamond Junction Field-Effect Transistors Operated at 200<formula formulatype="inline"> <img src="/images/tex/16753.gif" alt="^{\\circ}{\\rm C}"> </formula>

Type: Journal Paper

Author : Iwasaki, Takuya; Yaita, Junya; Kato, Haruhisa; Makino, Tatsuya; Ogura, M.; Takeuchi, D.; Okushi, H.; Yamasaki, Shintaro; Hatano, M.

Publisher: IEEE

Year: 2014

Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Passivation Layer

Type: Journal Paper

Author : Hanawa, H.; Onodera, Hidetoshi; Nakajima, Akitoshi; Horio, K.

Publisher: IEEE

Year: 2014

Impact of Isolation-Feature Geometry on Self-Heating of AlGaN/GaN HFETs

Type: Journal Paper

Author : Loghmany, Alireza; Valizadeh, Pouya; Record, Joseph

Publisher: IEEE

Year: 2014

Author

Hanawa, H. (1)

Hatano, M. (1)

Horio, K. (1)

Iwasaki, Takuya (1)

Kato, Haruhisa (1)

Loghmany, Alireza (1)

Makino, Tatsuya (1)

Nakajima, Akitoshi (1)

Ogura, M. (1)

Okushi, H. (1)

Publisher

IEEE (3)

Year

2014 (3)

Keywords

AlGaN-GaN (2)

aluminium compounds (2)

drain edge (2)

gallium compounds (2)

HEMTs (2)

high electron mobility transistors (2)

III-V semiconductors (2)

Logic gates (2)

Temperature measurement (2)

wide band gap semiconductors (2)

Type

Journal Paper (3)

Language (ISO)

English (3)

Content Type

Metadata Only (3)

Publication Title

Electron Devices, IEEE Transactions on (2)

Electron Device Letters, IEEE (1)

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