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Now showing items 1-6 of 6

Thermally Excited Mag-Noise in Ferromagnetic Ring Structures

Type: Journal Paper

Author : Zeng, Tao; Zhou, Yangzhong; Lin, Kawuu W.; Lai, P.T.; Pong, Philip W. T.

Publisher: IEEE

Year: 2014

A Neuronal Signal Detector for Biologically Generated Magnetic Fields

Type: Journal Paper

Author : Costa, Tiago; Piedade, Moises S.; Germano, Jose; Amaral, Jose; Freitas, P.P.

Publisher: IEEE

Year: 2014

Evolving Gaussian process models for predicting chaotic time-series

Type: Conference Paper

Author : Petelin, Dejan , Kocijan, Jus

Publisher: IEEE

Year: 2014

Single-Cycle-PLL Detection for Real-Time FM-AFM Applications

Type: Journal Paper

Author : Schlecker, Benedikt; Dukic, Maja; Erickson, Blake; Ortmanns, Maurits; Fantner, Georg; Anders, Jens

Publisher: IEEE

Year: 2014

Sampling Circuits That Break the kT/C Thermal Noise Limit

Type: Journal Paper

Author : Kapusta, R.; Haiyang Zhu; Lyden, Colin

Publisher: IEEE

Year: 2014

Investigation of Low-Frequency Noise in p-type Nanowire FETs: Effect of Switched Biasing Condition and Embedded SiGe Layer

Type: Journal Paper

Author : Sang-Hyun Lee; Ye-Ram Kim; Jae-Ho Hong; Eui-Young Jeong; Jun-Sik Yoon; Chang-Ki Baek; Dong-Won Kim; Jeong-Soo Lee; Yoon-Ha Jeong

Publisher: IEEE

Year: 2014

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Thermally Excited Mag-Noise in Ferromagnetic Ring Structures

A Neuronal Signal Detector for Biologically Generated Magnetic Fields

Evolving Gaussian process models for predicting chaotic time-series

Single-Cycle-PLL Detection for Real-Time FM-AFM Applications

Sampling Circuits That Break the kT/C Thermal Noise Limit

Investigation of Low-Frequency Noise in p-type Nanowire FETs: Effect of Switched Biasing Condition and Embedded SiGe Layer

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Thermally Excited Mag-Noise in Ferromagnetic Ring Structures

A Neuronal Signal Detector for Biologically Generated Magnetic Fields

Evolving Gaussian process models for predicting chaotic time-series

Single-Cycle-PLL Detection for Real-Time FM-AFM Applications

Sampling Circuits That Break the kT/C Thermal Noise Limit

Investigation of Low-Frequency Noise in p-type Nanowire FETs: Effect of Switched Biasing Condition and Embedded SiGe Layer