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نمایش تعداد 1-10 از 178

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    The Effect of Gate Length on SOI-MOSFETs Based on ZnO Material 

    نوع: Journal Paper
    نویسنده : R. Khoshlahni; هادی عربشاهی; Hadi Arabshahi
    سال: 2011
    خلاصه:



    fixed channel length, when the gate length is increased, the

    output drain current characteristics is decreased and

    therefore the transistor transconductance decreases.

    Moreover, with increasing the gate length, the effect of the...

    The Effect of Gate Length and Temperature on ZnO MOSFETs Operation 

    نوع: Journal Paper
    نویسنده : هادی عربشاهی; Hadi Arabshahi
    سال: 2010
    خلاصه:

    is decreased, the output drain current is increased, and therefore the

    transistor transconductance increases. Moreover, with increasing temperature the drain current is

    reduced, which results in the reduced drain barrier lowering. The simulated...

    The Effect of Gate Length on SOI-MOSFETs Operation 

    نوع: Journal Paper
    نویسنده : Javad Baedi; هادی عربشاهی; Hadi Arabshahi
    سال: 2010
    خلاصه:

    nm are simulated. Simulations show that with a

    fixed channel length, when the gate length is increased, the output drain current characteristics

    slope is increased, and therefore the transistor transconductance increases. Moreover, with...

    Holographic-type four-port optical circulator with a small-aperture Faraday rotator window 

    نوع: Conference Paper
    ناشر: IEEE
    سال: 2014

    Predictive Analytics for Outpatient Appointments 

    نوع: Conference Paper
    نویسنده : Nang Laik Ma , Khataniar, S. , Dan Wu , Ng, S.S.Y.
    ناشر: IEEE
    سال: 2014

    On the catalyzing effect of randomness on the per-flow throughput in wireless networks 

    نوع: Conference Paper
    نویسنده : Ciucu, F. , Schmitt, J.
    ناشر: IEEE
    سال: 2014

    Experimental validation of adverse weather effects on a 240 GHz multi-gigabit wireless link 

    نوع: Conference Paper
    ناشر: IEEE
    سال: 2014

    A Study of Gate Length and Source-Drain Bias on Electron Transport Properties in SiC Based MOSFETs Using Monte Carlo Method 

    نوع: Journal Paper
    نویسنده : هادی عربشاهی; Hadi Arabshahi
    سال: 2011
    خلاصه:

    the gate length is

    decreased, the output drain current is increased, and therefore the transistor transconductance increases. Moreover, with

    increasing temperature the drain current is reduced, which results in the reduced drain barrier...

    A Programmable Ultra Low Power Analog Band-Pass Filter for Cochlear Implants 

    نوع: Conference Paper
    نویسنده : الناز ظفرخواه; محمد میمندی نژاد; Elnaz Zafarkhah; Mohammad Maymandi Nejad
    سال: 2014
    خلاصه:

    Inthis article an ultra low power analog programmable band-pass filter for cochlear implants (CIs) is designed. In order to decreasethe power consumption, a subthresholdGm-Cstructure is used and also capacitiveattenuationtechnique ...

    The frequency Response and Effect of Trap parameters on The characteristics of GaN MESFETs 

    نوع: Journal Paper
    نویسنده : هادی عربشاهی; Hadi Arabshahi
    سال: 2008
    خلاصه:

    of modulating the gate bias have also been studied to

    test the device respond and derive the frequency bandwidth. The maximum cut-off frequency

    and transconductance of a 0.3 μm gate-length GaN MESFET including trapping

    effects are calculated...

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