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RISAnalysis of Radio Frequency and Stability Performance on Double-Gate Extended Source Tunneling Field-Effect Transistors
The radio-frequency (RF) and stability performance of double-gate (DG) extended source tunneling
field-effect transistors (TFETs) are evaluated by extracting RF parameters like cut-off frequency, maximum oscillation frequency, and stability...
Technology-Related Interruptions and Paper-Based Documents in Back-Office Knowledge Work
Radio-Frequency Modeling of Square-Shaped Extended Source Tunneling Field-Effect Transistors
The radio-frequency (RF) performances and small-signal parameters ofdouble-gate (DG) square-shaped extended source tunneling field-effect transistors (TFETs)with different gatelengths have been extracted and compared with those of conventional TFETs...
RF Modeling of p-n-p-n Double-Gate Tunneling Field-Effect Transistors
This paper presents radio-frequency (RF) modeling of p-n-p-n double-gate tunneling field-effect transistors (TFETs). The p-n-p-n TFETs are evaluated for various RF parameters such as cut-off frequency, maximum oscillation frequency, gatesource...
Analysis of radio frequency and stability performance on double-gate extended source tunneling field-effect transistors
The radio frequency (RF) and stability performance of double-gate (DG) extended source tunneling field-effect transistors (TFETs) are evaluated by extracting RF parameters like cut-off frequency (ft), maximum oscillations frequency (fmax...
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An improved dynamic data replica selection and placement in cloud
Computing Sammon's Projection of Social Networks by Differential Evolution
A 3D analytical modeling of tri-gate tunneling field-effect transistors
In this paper, a three-dimensional (3D) analytical solution of the electrostatic potential is derived for the trigate tunneling field-effect transistors (TG TFETs) based on the perimeter-weighted-sum approach. The model is derived by separating...