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Analysis of Lattice Temperature Effects on a GaInP/6H-SiC Strained Quantum-Well Lasers
سال: 2013
خلاصه:
In this paper, simulative study on the effects of lattice temperature on a GaInP/6H-SiC strained quantum-well (QW) laser\\'s device is presented. Loss mechanisms are severe in the edge-emitting lasers. As a consequence, ...