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RISInfluence of Electron-Plasmon Scattering on Low-Field Mobility in ZnO
Temperature and doping dependencies of electron mobility in ZnO semiconductor has been calculated using an iterative
technique. The following scattering mechanisms, i.e., impurity, polar optical phonon, acoustic phonon, piezoelectric, and...
Effect of High Field on Electron Mobility of InGaN
— Temperature and doping dependencies of
electron mobility in InGaN structure has been calculated in
steady-state and transient situation. The following
scattering mechanisms, i.e, impurity, polar optical phonon...
Pressure depended elastic, vibration and optical properties of NbIrSn from first principles calculations
Electron and phonon coupling dynamics in low gap semiconductor: Quantum versus classical scale
Temperature and doping dependencies of hot electron transport properties in bulk GaP, InP and Ga0.5In0.5P
ensemble Monte Carlo simulation has been
carriedout to study electron transport properties in GaP,
InP and Ga0.5In0.5P materials. The simulation results show
that intervalley electron transfer plays a ...
Effect of environment on the preparation of CdSe quantum dots capped with mercaptoacetic acid
Delay analysis for multiple channel access in cognitive radio networks
First-principles study of the superconductivity in MgB2 bulk and in its bilayer thin film based on electron–phonon coupling
In this paper, phonon-mediated superconductivity has been investigated in MgB2 bulk structure and bilayer thin film by using first-principles calculations. The electronic band structure, total and partial density of states (DOS and PDOS), phonon...