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Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Passivation Layer

Type: Journal Paper

Author : Hanawa, H.; Onodera, Hidetoshi; Nakajima, Akitoshi; Horio, K.

Publisher: IEEE

Year: 2014

Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask

Type: Journal Paper

Author : Zhe Xu; Jinyan Wang; Jingqian Liu; Chunyan Jin; Yong Cai; Zhenchuan Yang; Maojun Wang; Min Yu; Bing Xie; Wengang Wu; Xiaohua Ma; Jincheng Zhang; Yue Hao

Publisher: IEEE

Year: 2014

Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer

Type: Journal Paper

Author : Xinhua Wang; Sen Huang; Yingkui Zheng; Ke Wei; Xiaojuan Chen; Haoxiang Zhang; Xinyu Liu

Publisher: IEEE

Year: 2014

900 V/1.6 <inline-formula> <img src="/images/tex/21725.gif" alt="{\\rm m}\\Omega \\cdot{\\rm cm}^{2}"> </inline-formula> Normally Off <inline-formula> <img src="/images/tex/21726.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}/{\\rm GaN}"> </inline-formula> MOSFET on Silicon Substrate

Type: Journal Paper

Author : Maojun Wang; Ye Wang; Chuan Zhang; Bing Xie; Wen, Cheng P.; Jinyan Wang; Yilong Hao; Wengang Wu; Chen, Kevin J.; Bo Shen

Publisher: IEEE

Year: 2014

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Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Passivation Layer

Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask

Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer

900 V/1.6 <inline-formula> <img src="/images/tex/21725.gif" alt="{\\rm m}\\Omega \\cdot{\\rm cm}^{2}"> </inline-formula> Normally Off <inline-formula> <img src="/images/tex/21726.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}/{\\rm GaN}"> </inline-formula> MOSFET on Silicon Substrate

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Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Passivation Layer

Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask

Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer

900 V/1.6 <inline-formula> <img src="/images/tex/21725.gif" alt="{\\rm m}\\Omega \\cdot{\\rm cm}^{2}"> </inline-formula> Normally Off <inline-formula> <img src="/images/tex/21726.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}/{\\rm GaN}"> </inline-formula> MOSFET on Silicon Substrate