Ensemble Monte Carlo simulations have been

performed to model electron transport in wurtzite phase

InN diode with a InGaN heterojunction cathode. The hot

electron injection through the heterojunction cathode was...

در این مقاله ثابت جفت شدگی قوی را با استفاده از پیش بینی های دینامیک کوانتومی رنگ (QCD)برای متغیر های 1-T، ρ، BW و BT در فرآیند نابودی e+e- hadrons محاسبه می کنیم. این محاسبات تا مرتبه سوم انجام شده است. برای این منظور از داده های Monte Carlo...

Abstract— We performed a two-dimensional ensemble

Monte Carlo simulation of a n+

-i(n)-n+

diode based on InP

material in comparison with hydrodynamic model.

Scattering processes taken into account...

Electron mobility in InN is calculated using by

Monte Carlo and Iteration mode as a function of temperature and the electron density....

Temperature and doping dependencies of

electron mobility in InN, AlN and GaN structures have

been calculated using an ensemble Monte Carlo

simulation. Electronic states within the conduction band

valleys at the , U and K...

Electron transport properties in GaSb and

GaAs are calculated for different temperature, doping

dependencies at high electric field applications. The

calculations are performed using a three valleys ensemble

Monte Carlo...

An ensemble Monte Carlo simulation is used

to compare high field electron transport in bulk AlN and

AlGaN. For all materials, we find that electron velocity

overshoot only occurs when the electric field in increased to...

The results of an ensemble Monte Carlo

simulation of the steady-state and transient electron drift

velocity as a function of applied electric field in GaN and

AlGaN are presented. The effect of temperature and...