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RISIntegration of advanced CNS capabilities supporting NextGen/SESAR/CARATS
EUROCONTROL A/G DataCom centralised services (CS9 -DCS)
Two-Dimensional Analytical Modeling of Fully Depleted Short-Channel Dual-Gate Silico-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
In this paper, a two-dimensional (2D) analytical model of the surface potential variation along the channel in a fully depleted dual-gate (DG) silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) is proposed...
The Effects of Random Distribution Fluctuations of Dopants on SOI-MOSFET Performance
In this paper the effects of random distribution fluctuations of dopants in the channel of a nano-scale SOI-MOSFET are investigated via simulations.
Simulations are performed using energy balance model. According to obtained results...
بررسی مشخصه منفی در ترانزیستور لایه نازک
در این نوشتار میزان تاثیر محل فلز گیت بر عملکرد یک ترانزیستور MOSFET لایه نازک بررسی شده است. شبیه سازی نشان می دهد هر چه مکان گیت را به درین نزدیک نماییم، میزان جریان نسبت به حالتی که گیت در وسط یا نزدیک سورس باشد، کاهش خواهد یافت و مقاومت خروجی...
On the Linearization of MOSFET Capacitors
In this paper, a heuristic methodology for design of
highly linear MOSFET capacitors (MOSCAPs) has been
presented. For a certain amount of accessible chip area, the
proposed algorithm intends to find the structure which has the...
The Effect of Gate Length on SOI-MOSFETs Operation
The effect of gate length on the operation of silicon-on-insulator (SOI) MOSFET structure with a
layer of buried silicon oxide added to isolate the device body has been simulated. Three
transistors with gate lengths of 100, 200 and 500...