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A Study on the Values of Design Industry from the Perspectives of Consumers' Perceived Quality, Perceived Risks, and Willingness to Pay by Citing Examples from Accessory Design

نوع: Conference Paper

نویسنده : Pi-Chuan Sun , Huei-Shan Lee , Tzong-Shyuan Chen

ناشر: IEEE

سال: 2014

4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC <formula formulatype="inline"> <img src="/images/tex/21407.gif" alt="(11\\bar{2}0)"> </formula>

نوع: Journal Paper

نویسنده : Horita, Masahiro; Noborio, Masato; Kimoto, Tatsuya; Suda, Jun

ناشر: IEEE

سال: 2014

Characterization of the consistency of healthcare components using LDA

نوع: Conference Paper

نویسنده : Belinski, R. , Henderson, M.M.

ناشر: IEEE

سال: 2014

Investigation of Charge Relaxation in Silicon Nitride for the Reliability of Electrostatically Driven Capacitive MEMS Devices

نوع: Journal Paper

نویسنده : Gang Li; Wendong Zhang; Pengwei Li; Shengbo Sang; Jie Hu; Qinghua Zhao; Xuyuan Chen

ناشر: IEEE

سال: 2014

The challenges of transmission asset in Colombia: Planning and acceptability of expansion projects

نوع: Conference Paper

نویسنده : Molina, Juan D.; Rudnick, Hugh

ناشر: IEEE

سال: 2014

Comparison of Simulation and Measurement of Gate Leakage Current in Metal/Al<sub>2</sub>O<sub>3</sub>/GaN/AlGaN/AlN/GaN Capacitors

نوع: Journal Paper

نویسنده : Mehari, Shlomo Solomon; Yalon, E.; Gavrilov, A.; Mistele, D.; Bahir, Gad; Eizenberg, M.; Ritter, Daniel

ناشر: IEEE

سال: 2014

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A Study on the Values of Design Industry from the Perspectives of Consumers' Perceived Quality, Perceived Risks, and Willingness to Pay by Citing Examples from Accessory Design

4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC <formula formulatype="inline"> <img src="/images/tex/21407.gif" alt="(11\\bar{2}0)"> </formula>

Characterization of the consistency of healthcare components using LDA

Investigation of Charge Relaxation in Silicon Nitride for the Reliability of Electrostatically Driven Capacitive MEMS Devices

The challenges of transmission asset in Colombia: Planning and acceptability of expansion projects

Comparison of Simulation and Measurement of Gate Leakage Current in Metal/Al<sub>2</sub>O<sub>3</sub>/GaN/AlGaN/AlN/GaN Capacitors

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A Study on the Values of Design Industry from the Perspectives of Consumers' Perceived Quality, Perceived Risks, and Willingness to Pay by Citing Examples from Accessory Design

4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC <formula formulatype="inline"> <img src="/images/tex/21407.gif" alt="(11\\bar{2}0)"> </formula>

Characterization of the consistency of healthcare components using LDA

Investigation of Charge Relaxation in Silicon Nitride for the Reliability of Electrostatically Driven Capacitive MEMS Devices

The challenges of transmission asset in Colombia: Planning and acceptability of expansion projects

Comparison of Simulation and Measurement of Gate Leakage Current in Metal/Al<sub>2</sub>O<sub>3</sub>/GaN/AlGaN/AlN/GaN Capacitors