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RISInvestigation of the novel attributes in double recessed gate SiC MESFETs at drain side
In this paper, the potential impact of drain side-double recessed gate (DS-DRG) on silicon
carbide (SiC)-based metal semiconductor field effect transistors (MESFETs) is studied. We
investigate the device performance focusing...
Light Effect in photoionization of Traps in GaN MESFETs
Light Effect in photoionization of Traps in GaN MESFETs...
Orthogonally-filled subframes for optimum operation of co-channel LTE HetNets
A novel SiC MESFET with recessed P-Buffer layer
We report, for the first time, a silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) which has a recessed p-buffer layer into the channel region near the source and a recessed channel into the p-buffer layer region near...
IMPROVED PERFORMANCE OF 4H-SIC MESFETS USING MIDDLE RECESSED STRUCTURE WITH DUAL CHANNEL LAYER
A middle-recessed 4H-SiC metal semiconductor field effect transistors (MESFETs) with dual-channel layer was proposed and its electrical performances were studied by numerical device modeling. The higher doped lower-channel layer serves to increase...