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RISTechnological requirements for a self-aligned lateral SiGe HBT with the SiGe layer formed by Ge ion implantation in Si including theoretical performance
Year: 2006
Abstract:
A new method for realization of self-aligned lateral SiGe-HBT (SiGe-SLHBT) is introduced and ac and dc simulations are performed based on a two-dimensional physical model. The fabrication process is simple and requires a minimum number of masks...
Small-signal characterization of SiGe-HBT fT-doubler up to 120 GHz
Year: 2005
Abstract:
In this brief, small-signal characterizations of selectively implanted collector (SIC) and non-SIC SiGe-heterojunction bipolar transistors (HBT) fT-doublers up to 120 GHz are measured, analyzed, and compared with those of the corresponding single...
Ski-type self-balance biped walking for rough terrain
Publisher: IEEE
Year: 2014
Detection and location of partial discharges in a 460kV–66.7MVA reactor at field using antenna
Publisher: IEEE
Year: 2014
Channel capacity of distributed MIMO antennas for mobile terminals at 3.5 GHz
Publisher: IEEE
Year: 2014
Synthesis of phasers for real-time analog signal processing
Publisher: IEEE
Year: 2014
On the second-order cost of TDMA for Gaussian multiple access
Publisher: IEEE
Year: 2014
Social welfare and Live Line Maintenance
Publisher: IEEE
Year: 2014
Single-sided adaptive estimation of multi-path millimeter wave channels
Publisher: IEEE
Year: 2014
Multiband unidirectional cloaking based on geometric optics
Publisher: IEEE
Year: 2014