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High-frequency performance of AlGaN channel HEMTs with high breakdown voltage

Type: Journal Paper

Author : Nanjo, T.; Kurahashi, K.; Imai, A.; Suzuki, Yuya; Nakmura, M.; Suita, M.; Yagyu, E.

Publisher: IET

Year: 2014

T-Shaped Gate GaN HFETs on Si With Improved Breakdown Voltage and <inline-formula> <img src="/images/tex/21644.gif" alt="f_{\\rm MAX}"> </inline-formula>

Type: Journal Paper

Author : Murase, Yasuhiro; Asano, Katsunori; Takenaka, Isao; Ando, Y.; Takahashi, Hiroki; Sasaoka, Chiaki

Publisher: IEEE

Year: 2014

Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer

Type: Journal Paper

Author : Xinhua Wang; Sen Huang; Yingkui Zheng; Ke Wei; Xiaojuan Chen; Haoxiang Zhang; Xinyu Liu

Publisher: IEEE

Year: 2014

Author

Ando, Y. (1)

Asano, Katsunori (1)

Haoxiang Zhang (1)

Imai, A. (1)

Ke Wei (1)

Kurahashi, K. (1)

Murase, Yasuhiro (1)

Nakmura, M. (1)

Nanjo, T. (1)

Sasaoka, Chiaki (1)

Publisher

IEEE (2)

IET (1)

Year

2014 (3)

Keywords

aluminium compounds (3)

gallium compounds (3)

high electron mobility transistors (3)

III-V semiconductors (3)

wide band gap semiconductors (3)

AlGaN (2)

GaN (2)

GaN channel layer (2)

AlGaN buffer layer (1)

AlGaN channel HEMT (1)

Type

Journal Paper (3)

Language (ISO)

English (3)

Content Type

Metadata Only (3)

Publication Title

Electron Device Letters, IEEE (1)

Electron Devices, IEEE Transactions on (1)

Electronics Letters (1)

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