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نمایش تعداد 1-6 از 6

Spike Anneal Peak Temperature Impact on 1T-DRAM Retention Time

نوع: Journal Paper

نویسنده : Nissimoff, Albert; Martino, Joao Antonio; Aoulaiche, Marc; Veloso, A.; Witters, Liesbeth Johanna; Simoen, Eddy; Claeys, Cor

ناشر: IEEE

سال: 2014

Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel

نوع: Journal Paper

نویسنده : Dong-Il Moon; Jee-Yeon Kim; Joon-Bae Moon; Dong-Oh Kim; Yang-Kyu Choi

ناشر: IEEE

سال: 2014

Optimization of Bias Schemes for Long-Term Endurable 1T-DRAM Through the Use of the Biristor Mode Operation

نوع: Journal Paper

نویسنده : Dong-Oh Kim; Dong-Il Moon; Yang-Kyu Choi

ناشر: IEEE

سال: 2014

MO-BIZZ: Fostering Mobile Business through Enhanced Cloud Solutions

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Performance Models for CPU-GPU Data Transfers

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Multifunction Behavior of a Vertical MOSFET With Trench Body Structure and New Erase Mechanism for Use in 1T-DRAM

نوع: Journal Paper

نویسنده : Jyi-Tsong Lin; Po-Hsieh Lin

ناشر: IEEE

سال: 2014

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Spike Anneal Peak Temperature Impact on 1T-DRAM Retention Time

Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel

Optimization of Bias Schemes for Long-Term Endurable 1T-DRAM Through the Use of the Biristor Mode Operation

MO-BIZZ: Fostering Mobile Business through Enhanced Cloud Solutions

Performance Models for CPU-GPU Data Transfers

Multifunction Behavior of a Vertical MOSFET With Trench Body Structure and New Erase Mechanism for Use in 1T-DRAM

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Spike Anneal Peak Temperature Impact on 1T-DRAM Retention Time

Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel

Optimization of Bias Schemes for Long-Term Endurable 1T-DRAM Through the Use of the Biristor Mode Operation

MO-BIZZ: Fostering Mobile Business through Enhanced Cloud Solutions

Performance Models for CPU-GPU Data Transfers

Multifunction Behavior of a Vertical MOSFET With Trench Body Structure and New Erase Mechanism for Use in 1T-DRAM