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نمایش تعداد 1-5 از 5

Transducer driver with active bootstrap switch

نوع: Conference Paper

نویسنده : Yu, Jun; Arasu, Muthukumaraswamy Annamalai

ناشر: IEEE

سال: 2014

Digital compensation method for the path delay mismatches in GRO-TDC

نوع: Conference Paper

نویسنده : Park, Pyoungwon; Nag, Dipankar; Dan Lei, Yan; Arasu, Muthukumaraswamy Annamalai

ناشر: IEEE

سال: 2014

An SOI-CMOS low noise chopper amplifier for high temperature applications

نوع: Conference Paper

نویسنده : Chen, Yejin; Ling, Goh Wang; Yu, Jun; Arasu, Muthukumaraswamy Annamalai

ناشر: IEEE

سال: 2014

A fully integrated 166-GHz frequency synthesizer in 0.13-μm SiGe BiCMOS for D-band applications

نوع: Conference Paper

نویسنده : He, Jin; Xiong, Yong-Zhong; Li, Jiankang; Hou, Debin; Hu, Sanming; Yan, Dan Lei; Arasu, Muthukumaraswamy Annamalai; Zhang, Yue Ping

ناشر: IEEE

سال: 2014

A fully integrated 166-GHz frequency synthesizer in 0.13-μm SiGe BiCMOS for D-band applications

نوع: Conference Paper

نویسنده : He, Jin; Xiong, Yong-Zhong; Li, Jiankang; Hou, Debin; Hu, Sanming; Yan, Dan Lei; Arasu, Muthukumaraswamy Annamalai; Zhang, Yue Ping

ناشر: IEEE

سال: 2014

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Transducer driver with active bootstrap switch

Digital compensation method for the path delay mismatches in GRO-TDC

An SOI-CMOS low noise chopper amplifier for high temperature applications

A fully integrated 166-GHz frequency synthesizer in 0.13-μm SiGe BiCMOS for D-band applications

A fully integrated 166-GHz frequency synthesizer in 0.13-μm SiGe BiCMOS for D-band applications

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Transducer driver with active bootstrap switch

Digital compensation method for the path delay mismatches in GRO-TDC

An SOI-CMOS low noise chopper amplifier for high temperature applications

A fully integrated 166-GHz frequency synthesizer in 0.13-&#x03BC;m SiGe BiCMOS for D-band applications

A fully integrated 166-GHz frequency synthesizer in 0.13-&#x03BC;m SiGe BiCMOS for D-band applications

A fully integrated 166-GHz frequency synthesizer in 0.13-μm SiGe BiCMOS for D-band applications

A fully integrated 166-GHz frequency synthesizer in 0.13-μm SiGe BiCMOS for D-band applications