A new analytical model for the subthreshold swing of nanoscale undoped trigate silicon-on-insulator

metal–oxide–semiconductor field-effect transistors (MOSFETs) is proposed, based on the channel potential distribution and physical conduction...

is extracted by analytically integrating the band-to-band tunneling

generation rate over the tunneling region. The model well predicts the potential, subthreshold swing (SS), and transfer and output characteristics of DG TFETs. We analyze the dependence...