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نمایش تعداد 1-10 از 17

Novel sampling algorithm for Levy-walk based mobile phone sensing

نوع: Conference Paper

نویسنده : Thejaswini, M. , Rajalakshmi, P. , Desai, U.B.

ناشر: IEEE

سال: 2014

Degradations of Threshold Voltage, Mobility, and Drain Current and the Dependence on Transistor Geometry For Stressing at 77 K and 300 K

نوع: Journal Paper

نویسنده : Guoying Wu; Deptuch, Grzegorz W.; Hoff, Jim R.; Ping Gui

ناشر: IEEE

سال: 2014

nMOS Short Channel Device Characteristics After Soft Oxide Breakdown and Implications for Reliability Projections and Circuits

نوع: Journal Paper

نویسنده : Nicollian, Paul E.; Min Chen; Yang Yang; Chancellor, Cathy /A/.; Reddy, Viswanath K.

ناشر: IEEE

سال: 2014

A context-aware matching game for user association in wireless small cell networks

نوع: Conference Paper

نویسنده : Namvar, N. , Saad, W. , Maham, B. , Valentin, S.

ناشر: IEEE

سال: 2014

A comparison of the properties of helical type antennas when fed as a twin arm balanced pair

نوع: Conference Paper

نویسنده : Brister, J.A.; Edwards, R.M.

ناشر: IEEE

سال: 2014

Mobile real-time arousal detection

نوع: Conference Paper

نویسنده : Alexandratos, V. , Bulut, M. , Jasinschi, R.

ناشر: IEEE

سال: 2014

Analysis of quality factor of quartz-crystal tuning fork fabricated by etching process

نوع: Conference Paper

نویسنده : Itoh, H.

ناشر: IEEE

سال: 2014

Room to High Temperature Measurements of Flexible SOI FinFETs With Sub-20-nm Fins

نوع: Journal Paper

نویسنده : Diab, A.; Torres Sevilla, G.A.; Cristoloveanu, S.; Hussain, M.M.

ناشر: IEEE

سال: 2014

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO<sub><italic>x</italic></sub>/Ge MOS Interfaces Fabricated by Plasma Postoxidation

نوع: Journal Paper

نویسنده : Rui Zhang; Xiao Yu; Takenaka, Mitsuru; Takagi, Shinichi

ناشر: IEEE

سال: 2014

A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect

نوع: Journal Paper

نویسنده : Wei Cao; Jiahao Kang; Wei Liu; Banerjee, K.

ناشر: IEEE

سال: 2014

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Novel sampling algorithm for Levy-walk based mobile phone sensing

Degradations of Threshold Voltage, Mobility, and Drain Current and the Dependence on Transistor Geometry For Stressing at 77 K and 300 K

nMOS Short Channel Device Characteristics After Soft Oxide Breakdown and Implications for Reliability Projections and Circuits

A context-aware matching game for user association in wireless small cell networks

A comparison of the properties of helical type antennas when fed as a twin arm balanced pair

Mobile real-time arousal detection

Analysis of quality factor of quartz-crystal tuning fork fabricated by etching process

Room to High Temperature Measurements of Flexible SOI FinFETs With Sub-20-nm Fins

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO<sub><italic>x</italic></sub>/Ge MOS Interfaces Fabricated by Plasma Postoxidation

A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect

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Novel sampling algorithm for Levy-walk based mobile phone sensing

Degradations of Threshold Voltage, Mobility, and Drain Current and the Dependence on Transistor Geometry For Stressing at 77 K and 300 K

nMOS Short Channel Device Characteristics After Soft Oxide Breakdown and Implications for Reliability Projections and Circuits

A context-aware matching game for user association in wireless small cell networks

A comparison of the properties of helical type antennas when fed as a twin arm balanced pair

Mobile real-time arousal detection

Analysis of quality factor of quartz-crystal tuning fork fabricated by etching process

Room to High Temperature Measurements of Flexible SOI FinFETs With Sub-20-nm Fins

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO<sub><italic>x</italic></sub>/Ge MOS Interfaces Fabricated by Plasma Postoxidation

A Compact Current&#x2013;Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect

A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect