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نمایش تعداد 1-10 از 107

Dual Gate Indium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate Dielectrics

نوع: Journal Paper

نویسنده : Min Li; Lei Zhou; Weijing Wu; Jiawei Pang; Jianhua Zou; Junbiao Peng; Miao Xu

ناشر: IEEE

سال: 2014

First-principles study of structural, dynamical, and dielectric properties of A-La2O3

نوع: Journal Paper

نویسنده : راضیه ولی اصیل; محمد حسینی; razieh valiasill; Mohammad Hosseini

سال: 2004

خلاصه:

Abstract

We have investigated the structural, dynamical, and dielectric properties of A-La2O3, within density-functional theory. The relaxed structural parameters are found to be in very good agreement with experimental ...

First – principles study of structural, dynamical, and dielectric properties of K- Al2 O3

نوع: Journal Paper

نویسنده : محمد حسینی; Mohammad Hosseini

سال: 2004

خلاصه:

We have performed a first-principles study of the structural, dynamical, and dielectric properties of j-Al2O3. The relaxed structural parameters are found to be in excellent agreement with experimental data. Using ...

Implantable pulse oximetry on subcutaneous tissue

نوع: Conference Paper

نویسنده : Theodor, M.; Ruh, D.; Subramanian, S.; Forster, K.; Heilmann, C.; Beyersdorf, F.; Plachta, D.; Manoli, Y.; Zappe, H.; Seifert, A.

ناشر: IEEE

سال: 2014

Improved Image Fusion Algorithm Based on Wavelet Transform in EFVS

نوع: Conference Paper

نویسنده : Gang Li; Yifeng Dong

ناشر: IEEE

سال: 2014

Fabrication and measurement of graphene p–n junction with two top gates

نوع: Journal Paper

نویسنده : Jingping Liu; Safavi-Naeini, S.; Ban, D.

ناشر: IET

سال: 2014

Gate Leakage Characteristics for 28 nm HfZrO<sub><italic>x</italic></sub> pMOSFETs After DPN Process Treatment With Different Nitrogen Concentration

نوع: Journal Paper

نویسنده : Win-Der Lee; Mu-Chun Wang; Shea-Jue Wang; Chun-Wei Lian; Huang, L.S.

ناشر: IEEE

سال: 2014

A Scalable System for Community Discovery in Twitter During Hurricane Sandy

نوع: Conference Paper

نویسنده : Yin Huang , Han Dong , Yesha, Y. , Shujia Zhou

ناشر: IEEE

سال: 2014

Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

نوع: Journal Paper

نویسنده : Chun-Hu Cheng; Chin, Alvin

ناشر: IEEE

سال: 2014

Dielectric Breakdown of <formula formulatype="inline"> <img src="/images/tex/21417.gif" alt="\\hbox {Al}_{2}\\hbox {O}_{3}/ \\hbox {HfO}_{2}"> </formula> Bi-Layer Gate Dielectric

نوع: Journal Paper

نویسنده : Sahoo, K.C.; Oates, Anthony S.

ناشر: IEEE

سال: 2014

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Dual Gate Indium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate Dielectrics

First-principles study of structural, dynamical, and dielectric properties of A-La2O3

First – principles study of structural, dynamical, and dielectric properties of K- Al2 O3

Implantable pulse oximetry on subcutaneous tissue

Improved Image Fusion Algorithm Based on Wavelet Transform in EFVS

Fabrication and measurement of graphene p–n junction with two top gates

Gate Leakage Characteristics for 28 nm HfZrO<sub><italic>x</italic></sub> pMOSFETs After DPN Process Treatment With Different Nitrogen Concentration

A Scalable System for Community Discovery in Twitter During Hurricane Sandy

Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

Dielectric Breakdown of <formula formulatype="inline"> <img src="/images/tex/21417.gif" alt="\\hbox {Al}_{2}\\hbox {O}_{3}/ \\hbox {HfO}_{2}"> </formula> Bi-Layer Gate Dielectric

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Dual Gate Indium&#x2013;Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate Dielectrics

First-principles study of structural, dynamical, and dielectric properties of A-La2O3

First – principles study of structural, dynamical, and dielectric properties of K- Al2 O3

Implantable pulse oximetry on subcutaneous tissue

Improved Image Fusion Algorithm Based on Wavelet Transform in EFVS

Fabrication and measurement of graphene p&#8211;n junction with two top gates

Gate Leakage Characteristics for 28 nm HfZrO<sub><italic>x</italic></sub> pMOSFETs After DPN Process Treatment With Different Nitrogen Concentration

A Scalable System for Community Discovery in Twitter During Hurricane Sandy

Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

Dielectric Breakdown of <formula formulatype="inline"> <img src="/images/tex/21417.gif" alt="\\hbox {Al}_{2}\\hbox {O}_{3}/ \\hbox {HfO}_{2}"> </formula> Bi-Layer Gate Dielectric

Dual Gate Indium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate Dielectrics

Fabrication and measurement of graphene p–n junction with two top gates