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نمایش تعداد 1-10 از 13

Suitability of high-k gate oxides for III–V devices: A PBTI study in In<inf>0.53</inf>Ga<inf>0.47</inf>As devices with Al<inf>2</inf>O<inf>3</inf>

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Some studies on utilization of human body energy with hybrid piezoelectric and thermoelectric effect

نوع: Conference Paper

نویسنده : Datta, Suhit; Singh, Nihit Kumar; Roy, Swastik; Pal, Nitai

ناشر: IEEE

سال: 2014

Impacts of wind power on large signal voltage stability of power systems with different types of loads

نوع: Conference Paper

نویسنده : Konar, Srayashi; Chatterjee, Dheeman

ناشر: IEEE

سال: 2014

A Low-Complexity Cross-Layer Algorithm for Coordinated Downlink Scheduling and Robust Beamforming Under a Limited Feedback Constraint

نوع: Journal Paper

نویسنده : Yingxiang Yang; Bo Bai; Wei Chen; Hanzo, Lajos

ناشر: IEEE

سال: 2014

Inverse kinematics and path planning of Stewart Platform using crank arm actuation system

نوع: Conference Paper

نویسنده : Mamoon, M. , Saifullah

ناشر: IEEE

سال: 2014

The performance analysis of multiuser WCDMA systems using D-STBC in Rayleigh fading channel

نوع: Conference Paper

نویسنده : Muayyadi, A. , Budiman, G. , Astuti, R.P.

ناشر: IEEE

سال: 2014

Node discovery scheme of DDS using dynamic bloom filters

نوع: Conference Paper

نویسنده : Khaefi, Muhammad Rizal; Kim, Dong-Seong

ناشر: IEEE

سال: 2014

Data-aware power management for periodic real-time systems with non-volatile memory

نوع: Conference Paper

نویسنده : Nakada, T.; Shigematsu, T.; Komoda, T.; Miwa, S.; Nakamura, H.; Sato, Y.; Ueki, H.; Hayashikoshi, M.; Shimizu, T.

ناشر: IEEE

سال: 2014

Integrated AlGaAs sources of quantum correlated photon pairs

نوع: Conference Paper

نویسنده : Boucher, G.; Autebert, C.; Boitier, F.; Eckstein, A.; Lemaitre, A.; Manquest, C.; Sirtori, C.; Favero, I.; Leo, G.; Ducci, S.

ناشر: IEEE

سال: 2014

Fault diagnosis and fault tolerant control for the actuator of marine vehicles

نوع: Conference Paper

نویسنده : Liu, Fuqiang; Xu, Demin; Liu, Mingyong; Zhang, Siqi; Dai, Jiguo

ناشر: IEEE

سال: 2014

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Suitability of high-k gate oxides for III–V devices: A PBTI study in In<inf>0.53</inf>Ga<inf>0.47</inf>As devices with Al<inf>2</inf>O<inf>3</inf>

Some studies on utilization of human body energy with hybrid piezoelectric and thermoelectric effect

Impacts of wind power on large signal voltage stability of power systems with different types of loads

A Low-Complexity Cross-Layer Algorithm for Coordinated Downlink Scheduling and Robust Beamforming Under a Limited Feedback Constraint

Inverse kinematics and path planning of Stewart Platform using crank arm actuation system

The performance analysis of multiuser WCDMA systems using D-STBC in Rayleigh fading channel

Node discovery scheme of DDS using dynamic bloom filters

Data-aware power management for periodic real-time systems with non-volatile memory

Integrated AlGaAs sources of quantum correlated photon pairs

Fault diagnosis and fault tolerant control for the actuator of marine vehicles

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Suitability of high-k gate oxides for III&#x2013;V devices: A PBTI study in In<inf>0.53</inf>Ga<inf>0.47</inf>As devices with Al<inf>2</inf>O<inf>3</inf>

Some studies on utilization of human body energy with hybrid piezoelectric and thermoelectric effect

Impacts of wind power on large signal voltage stability of power systems with different types of loads

A Low-Complexity Cross-Layer Algorithm for Coordinated Downlink Scheduling and Robust Beamforming Under a Limited Feedback Constraint

Inverse kinematics and path planning of Stewart Platform using crank arm actuation system

The performance analysis of multiuser WCDMA systems using D-STBC in Rayleigh fading channel

Node discovery scheme of DDS using dynamic bloom filters

Data-aware power management for periodic real-time systems with non-volatile memory

Integrated AlGaAs sources of quantum correlated photon pairs

Fault diagnosis and fault tolerant control for the actuator of marine vehicles

Suitability of high-k gate oxides for III–V devices: A PBTI study in In<inf>0.53</inf>Ga<inf>0.47</inf>As devices with Al<inf>2</inf>O<inf>3</inf>