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نمایش تعداد 1-6 از 6

Activation of Mg implanted in GaN by multicycle rapid thermal annealing

نوع: Journal Paper

نویسنده : Anderson, Travis J.; Feigelson, Boris N.; Kub, Francis J.; Tadjer, Marko J.; Hobart, Karl D.; Mastro, Michael /A/.; Hite, Jennifer K.; Eddy, Charles R.

ناشر: IET

سال: 2014

Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Passivation Layer

نوع: Journal Paper

نویسنده : Hanawa, H.; Onodera, Hidetoshi; Nakajima, Akitoshi; Horio, K.

ناشر: IEEE

سال: 2014

Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs

نوع: Journal Paper

نویسنده : Zhikai Tang; Sen Huang; Xi Tang; Baikui Li; Chen, Kevin J.

ناشر: IEEE

سال: 2014

Comparison of Top-Gate and Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With the Same SiO<sub>2</sub>/a-InGaZnO/SiO<sub>2</sub> Stack

نوع: Journal Paper

نویسنده : Oh, Sung-Min; Ju Heyuck Baeck; Hyun Soo Shin; Jong Uk Bae; Kwon-Shik Park; In Byeong Kang

ناشر: IEEE

سال: 2014

Effect of Neutron Irradiation on High Voltage <newline/>4H-SiC Vertical JFET Characteristics: <newline/>Characterization and Modeling

نوع: Journal Paper

نویسنده : Popelka, S.; Hazdra, Pavel; Sharma, Ritu; Zahlava, V.; Vobecky, J.

ناشر: IEEE

سال: 2014

High-Performance a-IGZO Thin Film Diode as Selector for Cross-Point Memory Application

نوع: Journal Paper

نویسنده : Chasin, Adrian; Leqi Zhang; Bhoolokam, Ajay; Nag, Manoj; Steudel, Soeren; Govoreanu, B.; Gielen, G.; Heremans, Paul

ناشر: IEEE

سال: 2014

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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Passivation Layer

Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs

Comparison of Top-Gate and Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With the Same SiO<sub>2</sub>/a-InGaZnO/SiO<sub>2</sub> Stack

Effect of Neutron Irradiation on High Voltage <newline/>4H-SiC Vertical JFET Characteristics: <newline/>Characterization and Modeling

High-Performance a-IGZO Thin Film Diode as Selector for Cross-Point Memory Application

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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Passivation Layer

Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs

Comparison of Top-Gate and Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With the Same SiO<sub>2</sub>/a-InGaZnO/SiO<sub>2</sub> Stack

Effect of Neutron Irradiation on High Voltage <newline/>4H-SiC Vertical JFET Characteristics: <newline/>Characterization and Modeling

High-Performance a-IGZO Thin Film Diode as Selector for Cross-Point Memory Application