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نوع: Conference Paper

ناشر: IEEE

سال: 2014

Author index

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Inverse Scaling Trends for Charge-Trapping-Induced Degradation of FinFETs Performance

نوع: Journal Paper

نویسنده : Amoroso, S.M.; Georgiev, V.P.; Gerrer, L.; Towie, E.; Xingsheng Wang; Riddet, C.; Brown, A.R.; Asenov, A.

ناشر: IEEE

سال: 2014

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer

نوع: Journal Paper

نویسنده : Jun Yong Bak; Min-Ki Ryu; Sang Hee Ko Park; Chi Sun Hwang; Sung Min Yoon

ناشر: IEEE

سال: 2014

Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap Layer

نوع: Journal Paper

نویسنده : Jun Yong Bak; Min-Ki Ryu; Sang Hee Ko Park; Chi-Sun Hwang; Sung Min Yoon

ناشر: IEEE

سال: 2014

NiCo nanoparticles-doped ZnO nano array and The Magnetic Properties

نوع: Conference Paper

نویسنده : Chen, Yi; Chen, Longyi; Zhang, Jin

ناشر: IEEE

سال: 2014

A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs

نوع: Journal Paper

نویسنده : Santarelli, Alberto; Cignani, Rafael; Gibiino, Gian Piero; Niessen, Daniel; Traverso, Pier Andrea; Florian, Corrado; Schreurs, Dominique M. M.-P; Filicori, Fabio

ناشر: IEEE

سال: 2014

Effects of Dopant-Segregated Profiles on Schottky Barrier Charge-Trapping Flash Memories

نوع: Journal Paper

نویسنده : Chun-Hsing Shih; Yan-Xiang Luo

ناشر: IEEE

سال: 2014

Simulation Study of the Trapping Properties of <inline-formula> <img src="/images/tex/21669.gif" alt="{\\rm HfO}_{2}"> </inline-formula>-Based Charge-Trap Memory Cells

نوع: Journal Paper

نویسنده : Driussi, Francesco; Spiga, Silvia; Lamperti, Alessio; Congedo, G.; Gambi, Alessio

ناشر: IEEE

سال: 2014

Time-Dependent 3-D Statistical KMC Simulation of Reliability in Nanoscale MOSFETs

نوع: Journal Paper

نویسنده : Amoroso, Salvatore Maria; Gerrer, Louis; Hussin, R.; Adamu-Lema, F.; Asenov, Asen

ناشر: IEEE

سال: 2014

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Reviewers

Author index

Inverse Scaling Trends for Charge-Trapping-Induced Degradation of FinFETs Performance

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer

Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap Layer

NiCo nanoparticles-doped ZnO nano array and The Magnetic Properties

A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs

Effects of Dopant-Segregated Profiles on Schottky Barrier Charge-Trapping Flash Memories

Simulation Study of the Trapping Properties of <inline-formula> <img src="/images/tex/21669.gif" alt="{\\rm HfO}_{2}"> </inline-formula>-Based Charge-Trap Memory Cells

Time-Dependent 3-D Statistical KMC Simulation of Reliability in Nanoscale MOSFETs

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Author index

Inverse Scaling Trends for Charge-Trapping-Induced Degradation of FinFETs Performance

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In&#x2013;Ga&#x2013;Zn-O Active Channel and ZnO Charge-Trap Layer

Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap Layer

NiCo nanoparticles-doped ZnO nano array and The Magnetic Properties

A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs

Effects of Dopant-Segregated Profiles on Schottky Barrier Charge-Trapping Flash Memories

Simulation Study of the Trapping Properties of <inline-formula> <img src="/images/tex/21669.gif" alt="{\\rm HfO}_{2}"> </inline-formula>-Based Charge-Trap Memory Cells

Time-Dependent 3-D Statistical KMC Simulation of Reliability in Nanoscale MOSFETs

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer