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RISTechnological requirements for a self-aligned lateral SiGe HBT with the SiGe layer formed by Ge ion implantation in Si including theoretical performance
A new method for realization of self-aligned lateral SiGe-HBT (SiGe-SLHBT) is introduced and ac and dc simulations are performed based on a two-dimensional physical model. The fabrication process is simple and requires a minimum number of masks...
Small-signal characterization of SiGe-HBT fT-doubler up to 120 GHz
In this brief, small-signal characterizations of selectively implanted collector (SIC) and non-SIC SiGe-heterojunction bipolar transistors (HBT) fT-doublers up to 120 GHz are measured, analyzed, and compared with those of the corresponding single...
Joint information- and jamming-beamforming for full duplex secure communication
Implementation of an automatic FLIR-scheme in a 20 kV distribution grid
A Collector-Up SiGe-HBT for High Frequency Applications
A new method for realization of a collector-up
SiGe-HBT on SOI substrate for high frequency applications is
introduced and its dc and ac characteristics are predicted using a
two dimensional device simulator. The simulation...
Design and Optimization of a P+N+IN+ Tunnel FET with Si Channel and SiGe Source
A Silicon tunnel FET with Si1-x Gex source is investigated and optimized for improved performance. In order to optimize the device performance, Germanium mole fraction and the
length of the SiGe region is varied and the optimum values...