. The fabricated PA achieves a 12 dB small-signal gain, 30 W output power, and 52% PAE across the frequency range of 9–9.8 GHz. The thermal analyses of the power transistor are performed using a 3D model, which is developed in ANSYS software and calibrated...

This paper describes some of the most important design considerations such as: transistor and substrate selection for high power,matching network design and stabilization of microwave power amplifiers

with discrete ...

This paper presents the first implementation of hybrid 8.8-9.6 GHz X-band class J power amplifier (PA)

designed with a GaN HEMT power transistor. High efficiency power amplifiers suffer from nonlinear performance ...