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نمایش تعداد 1-10 از 48

Correction to “Separation of Ionization Traps in NPN Transistors Irradiated by Lower Energy Electrons” [Oct 13 3924-3931]

نوع: Journal Paper

نویسنده : Li, Xin; Liu, Cong; Yang, Jian; Zhao, Yiwen; Liu, Guo-Ping

ناشر: IEEE

سال: 2014

Parity-time-symmetric epsilon-near-zero metamaterials

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Game theoretic anti-jamming dynamic frequency hopping and rate adaptation in wireless systems

نوع: Conference Paper

نویسنده : Hanawal, M.K. , Abdel-Rahman, M.J. , Krunz, M.

ناشر: IEEE

سال: 2014

Erbium-doped laser with multi-segmented silicon nitride structure

نوع: Conference Paper

ناشر: IEEE

سال: 2014

The Susceptibility of <formula formulatype="inline"> <img src="/images/tex/21604.gif" alt="{\\hbox {TaO}}_{\\rm x}"> </formula>-Based Memristors to High Dose Rate Ionizing Radiation and Total Ionizing Dose

نوع: Journal Paper

نویسنده : McLain, Michael L.; Hjalmarson, Harold P.; Sheridan, Tim J.; Mickel, Patrick R.; Hanson, D.; McDonald, Kyle; Hughart, David R.; Marinella, Matthew J.

ناشر: IEEE

سال: 2014

Real-time signal processing for FM-based passive bistatic radar using GPUs

نوع: Conference Paper

نویسنده : Peichuan Zhang , Yong Wu , Jun Wang , Jiahui Qiao

ناشر: IEEE

سال: 2014

Minimum cost opportunistic routing with intra-session network coding

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Characterization and Modeling of a Floating Gate Dosimeter with Gamma and Protons at Various Energies

نوع: Journal Paper

نویسنده : Danzeca, S.; Cesari, J.; Brugger, M.; Dusseau, L.; Masi, A.; Pineda, A.; Spiezia, G.

ناشر: IEEE

سال: 2014

CMOS Differential and Amplified Dosimeter with Field Oxide N-Channel MOSFETs

نوع: Journal Paper

نویسنده : Carbonetto, S.; GarcianInza, M.; Lipovetzky, J.; Carra, M.J.; Redin, E.; Sambuco Salomone, L.; Faigon, A.

ناشر: IEEE

سال: 2014

Lightweight Nanocomposites Based on Polypropylene and Aluminum Nanoparticles and Their Shielding Capability to Ionizing Radiation

نوع: Journal Paper

نویسنده : Arranz-André s, Javier; Pé rez, Ernesto; Cerrada, Marí a L.

ناشر: IEEE

سال: 2014

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Correction to “Separation of Ionization Traps in NPN Transistors Irradiated by Lower Energy Electrons” [Oct 13 3924-3931]

Parity-time-symmetric epsilon-near-zero metamaterials

Game theoretic anti-jamming dynamic frequency hopping and rate adaptation in wireless systems

Erbium-doped laser with multi-segmented silicon nitride structure

The Susceptibility of <formula formulatype="inline"> <img src="/images/tex/21604.gif" alt="{\\hbox {TaO}}_{\\rm x}"> </formula>-Based Memristors to High Dose Rate Ionizing Radiation and Total Ionizing Dose

Real-time signal processing for FM-based passive bistatic radar using GPUs

Minimum cost opportunistic routing with intra-session network coding

Characterization and Modeling of a Floating Gate Dosimeter with Gamma and Protons at Various Energies

CMOS Differential and Amplified Dosimeter with Field Oxide N-Channel MOSFETs

Lightweight Nanocomposites Based on Polypropylene and Aluminum Nanoparticles and Their Shielding Capability to Ionizing Radiation

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Correction to &#x201C;Separation of Ionization Traps in NPN Transistors Irradiated by Lower Energy Electrons&#x201D; [Oct 13 3924-3931]

Parity-time-symmetric epsilon-near-zero metamaterials

Game theoretic anti-jamming dynamic frequency hopping and rate adaptation in wireless systems

Erbium-doped laser with multi-segmented silicon nitride structure

The Susceptibility of <formula formulatype="inline"> <img src="/images/tex/21604.gif" alt="{\\hbox {TaO}}_{\\rm x}"> </formula>-Based Memristors to High Dose Rate Ionizing Radiation and Total Ionizing Dose

Real-time signal processing for FM-based passive bistatic radar using GPUs

Minimum cost opportunistic routing with intra-session network coding

Characterization and Modeling of a Floating Gate Dosimeter with Gamma and Protons at Various Energies

CMOS Differential and Amplified Dosimeter with Field Oxide N-Channel MOSFETs

Lightweight Nanocomposites Based on Polypropylene and Aluminum Nanoparticles and Their Shielding Capability to Ionizing Radiation

Correction to “Separation of Ionization Traps in NPN Transistors Irradiated by Lower Energy Electrons” [Oct 13 3924-3931]