electric field, breakdown voltage, maximum DC trans-conductance (gm), drain current, gate-source capacitance, cut off frequency and DC output conductance (go) as a function of different source side (Nss) and drain side (Nos) barrier doping levels...

The potentialimpactofgallium-nitride(GaN)highelectronmobilitytransistor(HEMT)withap-layerin

the barrierisreported.Weinvestigatethedeviceperformancefocusingonshortchanneleffects,gate–

drain capacitance,electric ...