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Quantum Key Distribution Protocol Using Quantum Fourier Transform

Type: Journal Paper

Author : Xiaoqing Tan; Siting Cheng; Jin Li; Zhihong Feng

Year: 2015

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Impact of peald AlN interfacial passivation layer on thin barrier AlGaN/GaN HEMTs

Type: Conference Paper

Author : Xin Tan; Yuanjie Lv; Shaobo Dun; Guodong Gu; Zhihong Feng

Publisher: IEEE

Year: 2014

Influence of substrate on the RF-related electric characteristics for W-band AlGaN/GaN HEMTs

Type: Conference Paper

Author : Yuanjie Lv; Zhihong Feng; Xin Tan; Xubo Song; Guodong Gu

Publisher: IEEE

Year: 2014

Realization of GaN-based high frequency planar schottky barrier diodes through air-bridge technology

Type: Conference Paper

Author : Shixiong Liang; Yulong Fang; Dong Xing; Junlong Wang; Lisen Zhang; Dabao Yang; Xiongwen Zhang; Zhihong Feng

Publisher: IEEE

Year: 2014

Transient simulation of AlGaN/GaN HEMT including trapping and thermal effects

Type: Conference Paper

Author : Xingye Zhou; Zhihong Feng; Yuangang Wang; Guodong Gu; Xubo Song; Shujun Cai

Publisher: IEEE

Year: 2014

70 nm gate-length THz InP-based In<inf>0.7</inf>Ga<inf>0.3</inf>As/In<inf>0.52</inf>Al<inf>0.48</inf>As HEMT with f<inf>max</inf> of 540GHz

Type: Conference Paper

Author : Lisen Zhang; Zhihong Feng; Dong Xing; Shixiong Liang; Junlong Wang; Guodong Gu; Yuangang Wang; Peng Xu

Publisher: IEEE

Year: 2014

Activities of antioxidant enzymes in three bacteria exposed to bensulfuron-methyl

Type: Journal Paper

Author : Xiaoyan Lin; Xiaohong Xu; Chinghong Yang; Yuhua Zhao; Zhihong Feng; Yangyang Dong

Year: 2009

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AlGaN/GaN Polarization-Doped Field-Effect Transistors With Graded Heterostructure

Type: Journal Paper

Author : Yulong Fang; Zhihong Feng; Jiayun Yin; Xingye Zhou; Yuangang Wang; Guodong Gu; Xubo Song; Yuanjie Lv; Chengming Li; Shujun Cai

Publisher: IEEE

Year: 2014

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Quantum Key Distribution Protocol Using Quantum Fourier Transform

Impact of peald AlN interfacial passivation layer on thin barrier AlGaN/GaN HEMTs

Influence of substrate on the RF-related electric characteristics for W-band AlGaN/GaN HEMTs

Realization of GaN-based high frequency planar schottky barrier diodes through air-bridge technology

Transient simulation of AlGaN/GaN HEMT including trapping and thermal effects

70 nm gate-length THz InP-based In<inf>0.7</inf>Ga<inf>0.3</inf>As/In<inf>0.52</inf>Al<inf>0.48</inf>As HEMT with f<inf>max</inf> of 540GHz

Activities of antioxidant enzymes in three bacteria exposed to bensulfuron-methyl

AlGaN/GaN Polarization-Doped Field-Effect Transistors With Graded Heterostructure

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Quantum Key Distribution Protocol Using Quantum Fourier Transform

Impact of peald AlN interfacial passivation layer on thin barrier AlGaN/GaN HEMTs

Influence of substrate on the RF-related electric characteristics for W-band AlGaN/GaN HEMTs

Realization of GaN-based high frequency planar schottky barrier diodes through air-bridge technology

Transient simulation of AlGaN/GaN HEMT including trapping and thermal effects

70 nm gate-length THz InP-based In<inf>0.7</inf>Ga<inf>0.3</inf>As/In<inf>0.52</inf>Al<inf>0.48</inf>As HEMT with f<inf>max</inf> of 540GHz

Activities of antioxidant enzymes in three bacteria exposed to bensulfuron-methyl

AlGaN/GaN Polarization-Doped Field-Effect Transistors With Graded Heterostructure