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Elastic relaxation in intrinsically-strained Fins: Simulations, physical and electrical characterization

Type: Conference Paper

Author : Allibert, F.; Morin, P.; He, H.; Li, J.; Schwarzenbach, W.; Loubet, N.; Khakifirooz, A.; DeSalvo, B.; Doris, B.

Publisher: IEEE

Year: 2014

Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes

Type: Conference Paper

Author : Besnard, G.; Garros, X.; Andrieu, F.; Nguyen, P.; Van Den Daele, W.; Reynaud, P.; Schwarzenbach, W.; Delprat, D.; Bourdelle, K.K.; Reimbold, G.; Cristoloveanu, S.

Publisher: IEEE

Year: 2014

Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs

Type: Conference Paper

Author : Andrieu, F.; Casse, M.; Baylac, E.; Perreau, P.; Nier, O.; Rideau, D.; Berthelon, R.; Pourchon, F.; Pofelski, A.; De Salvo, B.; Gallon, C.; Mazzocchi, V.; Barge, D.; Gaumer, C.; Gourhant, O.; Cros, A.; Barral, V.; Ranica, R.; Planes, N.; Schwarzenbach, W.; Richard, E.; Josse, E.; Weber, O.; Arnaud, F.; Vinet, M.; Faynot, O.; Haond, M.

Publisher: IEEE

Year: 2014

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Elastic relaxation in intrinsically-strained Fins: Simulations, physical and electrical characterization

Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes

Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs

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Elastic relaxation in intrinsically-strained Fins: Simulations, physical and electrical characterization

Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes

Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs