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Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs

Type: Journal Paper

Author : Koswatta, S.O.; Lundstrom, M.S.; Nikonov, D.E.

Year: 2009

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Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors

Type: Journal Paper

Author : Gengchiau Liang; Neophytou, N.; Nikonov, D.E.; Lundstrom, M.S.

Year: 2007

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Modeling of Nanoscale Devices

Type: Journal Paper

Author : Anantram, M.P.; Lundstrom, M.S.; Nikonov, D.E.

Publisher: IEEE

Year: 2008

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Nonequilibrium Green\'s Function Treatment of Phonon Scattering in Carbon-Nanotube Transistors

Type: Journal Paper

Author : Koswatta, S.O.; Hasan, S.; Lundstrom, M.S.; Anantram, M.P.; Nikonov, D.E.

Year: 2007

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Extended Hückel theory for quantum transport in magnetic tunnel junctions

Type: Conference Paper

Author : Shine, G.; Manipatruni, S.; Chaudhry, A.; Saraswat, K.C.; Nikonov, D.E.; Young, I.A.

Publisher: IEEE

Year: 2014

Analysis of graphene nanoribbons as a channel material for field-effect transistors

Type: Journal Paper

Author : Obradovic, B.; Kotlyar, R.; Heinz, F.; Matagne, P.; Rakshit, T.; Giles, M. D.; Stettler, M. A.; Nikonov, D. E.

Year: 2006

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Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs

Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors

Modeling of Nanoscale Devices

Nonequilibrium Green\'s Function Treatment of Phonon Scattering in Carbon-Nanotube Transistors

Extended Hückel theory for quantum transport in magnetic tunnel junctions

Analysis of graphene nanoribbons as a channel material for field-effect transistors

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Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs

Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors

Modeling of Nanoscale Devices

Nonequilibrium Green\'s Function Treatment of Phonon Scattering in Carbon-Nanotube Transistors

Extended H&#x00FC;ckel theory for quantum transport in magnetic tunnel junctions

Analysis of graphene nanoribbons as a channel material for field-effect transistors

Extended Hückel theory for quantum transport in magnetic tunnel junctions