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Intrinsic Performance of InAs Nanowire Capacitors

Type: Journal Paper

Author : Jansson, Karl; Lind, Erik; Wernersson, Lars-Erik

Publisher: IEEE

Year: 2014

Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

Type: Journal Paper

Author : Jiongjiong Mo; Lind, Erik; Wernersson, Lars-Erik

Publisher: IEEE

Year: 2014

<formula formulatype="inline"> <img src="/images/tex/21154.gif" alt="{\\rm In}_{0.53}{\\rm Ga}_{0.47}{\\rm As}"> </formula> Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels

Type: Journal Paper

Author : Zota, Cezar B.; Wernersson, Lars-Erik; Lind, Erik

Publisher: IEEE

Year: 2014

High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

Type: Journal Paper

Author : Johansson, Susie; Memisevic, Elvedin; Wernersson, Lars-Erik; Lind, Erik

Publisher: IEEE

Year: 2014

RF and DC Analysis of Stressed InGaAs MOSFETs

Type: Journal Paper

Author : Roll, Guntrade; Lind, Erik; Egard, Mikael; Johansson, Susie; Ohlsson, Lars; Wernersson, Lars-Erik

Publisher: IEEE

Year: 2014

InAs nanowire MOSFET differential active mixer on Si-substrate

Type: Journal Paper

Author : Persson, Karl-Magnus; Berg, Markus; Sjö land, Henrik; Lind, Erik; Wernersson, Lars-Erik

Publisher: IET

Year: 2014

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Intrinsic Performance of InAs Nanowire Capacitors

Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

<formula formulatype="inline"> <img src="/images/tex/21154.gif" alt="{\\rm In}_{0.53}{\\rm Ga}_{0.47}{\\rm As}"> </formula> Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels

High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

RF and DC Analysis of Stressed InGaAs MOSFETs

InAs nanowire MOSFET differential active mixer on Si-substrate

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Intrinsic Performance of InAs Nanowire Capacitors

Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

<formula formulatype="inline"> <img src="/images/tex/21154.gif" alt="{\\rm In}_{0.53}{\\rm Ga}_{0.47}{\\rm As}"> </formula> Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels

High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

RF and DC Analysis of Stressed InGaAs MOSFETs

InAs nanowire MOSFET differential active mixer on Si-substrate