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A Flexible, Ultra-Low-Energy 35 pJ/Pulse Digital Back-End for a QAC IR-UWB Receiver

Type: Journal Paper

Author : Verhelst, M.; Dehaene, W.

Year: 2008

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Analysis of the QAC IR-UWB Receiver for Low Energy, Low Data-Rate Communication

Type: Journal Paper

Author : Verhelst, M.; Dehaene, W.

Year: 2008

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27.3 A 210mV 5MHz variation-resilient near-threshold JPEG encoder in 40nm CMOS

Type: Conference Paper

Author : Reynders, N. , Dehaene, W.

Publisher: IEEE

Year: 2014

A 3.6 pJ/Access 480 MHz, 128 kb On-Chip SRAM With 850 MHz Boost Mode in 90 nm CMOS With Tunable Sense Amplifiers

Type: Journal Paper

Author : Cosemans, S.; Dehaene, W.; Catthoor, F.

Year: 2009

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[IEEE 13th IEEE International Conference on Electronics, Circuits and Systems - Nice (2006.12.10-2006.12.13)] 2006 13th IEEE International Conference on Electronics, Circuits and Systems - A High speed, Low Voltage to High Voltage Level Shifter in Standard 1.2V 0.13μm CMOS

Type: Journal Paper

Author : Serneels, B.; Steyaert, M.; Dehaene, W.

Year: 2006

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Impact of multipath fading on a precise 60 GHz indoor locationing system

Type: Conference Paper

Author : Ayhan, T. , Verhelst, M. , Dehaene, W.

Publisher: IEEE

Year: 2014

A Reconfigurable, 130 nm CMOS 108 pJ/pulse, Fully Integrated IR-UWB Receiver for Communication and Precise Ranging

Type: Journal Paper

Author : Van Helleputte, N.; Verhelst, M.; Dehaene, W.; Gielen, G.

Year: 2010

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[IEEE 2009 IEEE International Solid-State Circuits Conference (ISSCC 2009) - San Francisco, CA (2009.02.8-2009.02.12)] 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers - A reconfigurable, 0.13µm CMOS 110pJ/pulse, fully integrated IR-UWB receiver for communication and sub-cm ranging

Type: Journal Paper

Author : Verhelst, M.; Van Helleputte, N.; Gielen, G.; Dehaene, W.

Year: 2009

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Read Stability and Write-Ability Analysis of SRAM Cells for Nanometer Technologies

Type: Journal Paper

Author : Grossar, E.; Stucchi, M.; Maex, K.; Dehaene, W.

Year: 2006

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A 60GHz transmitter in 40nm CMOS achieving mm-precision for discrete-carrier localization

Type: Conference Paper

Author : Indirayanti, P.; Ayhan, T.; Verhelst, M.; Dehaene, W.; Reynaert, P.

Publisher: IEEE

Year: 2014

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A Flexible, Ultra-Low-Energy 35 pJ/Pulse Digital Back-End for a QAC IR-UWB Receiver

Analysis of the QAC IR-UWB Receiver for Low Energy, Low Data-Rate Communication

27.3 A 210mV 5MHz variation-resilient near-threshold JPEG encoder in 40nm CMOS

A 3.6 pJ/Access 480 MHz, 128 kb On-Chip SRAM With 850 MHz Boost Mode in 90 nm CMOS With Tunable Sense Amplifiers

[IEEE 13th IEEE International Conference on Electronics, Circuits and Systems - Nice (2006.12.10-2006.12.13)] 2006 13th IEEE International Conference on Electronics, Circuits and Systems - A High speed, Low Voltage to High Voltage Level Shifter in Standard 1.2V 0.13μm CMOS

Impact of multipath fading on a precise 60 GHz indoor locationing system

A Reconfigurable, 130 nm CMOS 108 pJ/pulse, Fully Integrated IR-UWB Receiver for Communication and Precise Ranging

Read Stability and Write-Ability Analysis of SRAM Cells for Nanometer Technologies

A 60GHz transmitter in 40nm CMOS achieving mm-precision for discrete-carrier localization

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A Flexible, Ultra-Low-Energy 35 pJ/Pulse Digital Back-End for a QAC IR-UWB Receiver

Analysis of the QAC IR-UWB Receiver for Low Energy, Low Data-Rate Communication

27.3 A 210mV 5MHz variation-resilient near-threshold JPEG encoder in 40nm CMOS

A 3.6 pJ/Access 480 MHz, 128 kb On-Chip SRAM With 850 MHz Boost Mode in 90 nm CMOS With Tunable Sense Amplifiers

[IEEE 13th IEEE International Conference on Electronics, Circuits and Systems - Nice (2006.12.10-2006.12.13)] 2006 13th IEEE International Conference on Electronics, Circuits and Systems - A High speed, Low Voltage to High Voltage Level Shifter in Standard 1.2V 0.13μm CMOS

Impact of multipath fading on a precise 60 GHz indoor locationing system

A Reconfigurable, 130 nm CMOS 108 pJ/pulse, Fully Integrated IR-UWB Receiver for Communication and Precise Ranging

Read Stability and Write-Ability Analysis of SRAM Cells for Nanometer Technologies

A 60GHz transmitter in 40nm CMOS achieving mm-precision for discrete-carrier localization