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Evolution of Graphene Growth on Ni and Cu by Carbon Isotope Labeling

Type: Journal Paper

Author : Li, Xuesong; Cai, Weiwei; Colombo, Luigi; Ruoff, Rodney S.

Year: 2009

Production and processing of graphene and 2d crystals

Type: Journal Paper

Author : Bonaccorso, Francesco; Lombardo, Antonio; Hasan, Tawfique; Sun, Zhipei; Colombo, Luigi; Ferrari, Andrea C.

Year: 2012

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Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes

Type: Journal Paper

Author : Li, Xuesong; Zhu, Yanwu; Cai, Weiwei; Borysiak, Mark; Han, Boyang; Chen, David; Piner, Richard D.; Colombo, Luigi; Ruoff, Rodney S.

Year: 2009

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Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

Type: Journal Paper

Author : Kim, Seyoung; Nah, Junghyo; Jo, Insun; Shahrjerdi, Davood; Colombo, Luigi; Yao, Zhen; Tutuc, Emanuel; Banerjee, Sanjay K.

Publisher: American Institute of Physics

Year: 2009

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Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors

Type: Journal Paper

Author : Saungeun Park; Sangchul Lee; Mordi, G.; Jandhyala, Srivatsava; Min-Woo Ha; Jang-Sik Lee; Colombo, Luigi; Wallace, Robert M.; Byoung Hun Lee; Jiyoung Kim

Publisher: IEEE

Year: 2014

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Evolution of Graphene Growth on Ni and Cu by Carbon Isotope Labeling

Production and processing of graphene and 2d crystals

Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors

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Evolution of Graphene Growth on Ni and Cu by Carbon Isotope Labeling

Production and processing of graphene and 2d crystals

Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors