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Total-Ionizing-Dose Response of Narrow, Long Channel 45 nm PDSOI Transistors

Type: Journal Paper

Author : Alles, Michael L.; Hughes, Harold L.; Ball, D.R.; McMarr, Patrick J.; Schrimpf, R.D.

Publisher: IEEE

Year: 2014

Heavy-Ion and Laser Induced Charge Collection in SiGe Channel <formula formulatype="inline"> <img src="/images/tex/21595.gif" alt="p{\\rm MOSFETs}"> </formula>

Type: Journal Paper

Author : En Xia Zhang; Samsel, I.K.; Hooten, N.C.; Bennett, W.G.; Funkhouser, Erik D.; Kai Ni; Ball, D.R.; McCurdy, Michael W.; Fleetwood, D.M.; Reed, R.A.; Alles, Michael L.; Schrimpf, R.D.; Linten, D.; Mitard, J.

Publisher: IEEE

Year: 2014

State and Angular Dependence of Single-Event Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors

Type: Journal Paper

Author : Alles, Michael L.; Schrimpf, R.D.; Massengill, Lloyd W.; Ball, D.R.; Kelly, Andrew T.; Haddad, Nadim F.; Rodgers, John C.; Ross, Jason F.; Chan, Erwin Hoi Wing; Raman, Ashok; Turowski, Marek

Publisher: IEEE

Year: 2014

Geometry Dependence of Total-Dose Effects in Bulk FinFETs

Type: Journal Paper

Author : Chatterjee, I.; Zhang, E.X.; Bhuva, B.L.; Reed, R.A.; Alles, Michael L.; Mahatme, N.N.; Ball, D.R.; Schrimpf, R.D.; Fleetwood, D.M.; Linten, D.; Simoen, Eddy; Mitard, J.; Claeys, Cor

Publisher: IEEE

Year: 2014

Mitigation of Single-Event Charge Sharing in a Commercial FPGA Architecture

Type: Journal Paper

Author : Kelly, Andrew T.; Alles, Michael L.; Ball, D.R.; Massengill, Lloyd W.; Ramaswamy, Srini; Haddad, Nadim F.; Brown, Ronald D.; Fleming, Patrick R.; Chan, Erwin Hoi Wing; Ekanayake, Virantha; Kelly, Clinton W.; Pelosi, Christopher; McMorrow, Dale; Buchner, Stephen P.; Warner, Jeffrey H.; Berg, Melanie D.

Publisher: IEEE

Year: 2014

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Total-Ionizing-Dose Response of Narrow, Long Channel 45 nm PDSOI Transistors

Heavy-Ion and Laser Induced Charge Collection in SiGe Channel <formula formulatype="inline"> <img src="/images/tex/21595.gif" alt="p{\\rm MOSFETs}"> </formula>

State and Angular Dependence of Single-Event Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors

Geometry Dependence of Total-Dose Effects in Bulk FinFETs

Mitigation of Single-Event Charge Sharing in a Commercial FPGA Architecture

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Total-Ionizing-Dose Response of Narrow, Long Channel 45&#x00A0;nm PDSOI Transistors

Heavy-Ion and Laser Induced Charge Collection in SiGe Channel <formula formulatype="inline"> <img src="/images/tex/21595.gif" alt="p{\\rm MOSFETs}"> </formula>

State and Angular Dependence of Single-Event Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors

Geometry Dependence of Total-Dose Effects in Bulk FinFETs

Mitigation of Single-Event Charge Sharing in a Commercial FPGA Architecture

Total-Ionizing-Dose Response of Narrow, Long Channel 45 nm PDSOI Transistors