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RISA graphite based STT-RAM cell with reduction in switching current
Year: 2015
Abstract:
graphite based Magnetic Tunnel Junction
(MTJ) is proposed. First, the cross-section of the structure is selected to be an ellipse of 45 nm and
180 nm dimensions and a six-layer graphite is used as tunnel barrier. By passing a lateral current...
STT-RAM Energy Reduction Using Self-Referenced Differential Write Termination Technique
Year: 2017
Abstract:
technique is proposed to terminate the write operation immediately after switching takes place in
the magnetic tunneling junction (MTJ). As a result, both the write time and write energy consumption of 1T-1MTJ bitcells improves. Moreover, the proposed...
Analysis of parameter sensitivity for induction coil launcher based on orthogonal experimental method
Publisher: IEEE
Year: 2014
Technical Program Committee
Publisher: IEEE
Year: 2014
Spin memory shows its might [News]
Publisher: IEEE
Year: 2014
Unified Analytical Model for Switching Behavior of Magnetic Tunnel Junction
Publisher: IEEE
Year: 2014
Compact Modeling of a Magnetic Tunnel Junction Based on Spin Orbit Torque
Publisher: IEEE
Year: 2014
Chirp Spectroscopy Applied to the Characterization of Ferromagnetic Resonance in Magnetic Tunnel Junctions
Publisher: IEEE
Year: 2014
Dynamic Compact Model of Self-Referenced Magnetic Tunnel Junction
Publisher: IEEE
Year: 2014