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RISElectronic Transport Properties in InN Submicron n+-n-n+ Diode with InGaN Heterojunction Cathode
Ensemble Monte Carlo simulations have been
performed to model electron transport in wurtzite phase
InN diode with a InGaN heterojunction cathode. The hot
electron injection through the heterojunction cathode was...
A Comparison Between Hydrodynamic and Monte Carlo Model Characteristics of n+ -i(n)- n+ Diode Based on InP Material
Abstract— We performed a two-dimensional ensemble
Monte Carlo simulation of a n+
-i(n)-n+
diode based on InP
material in comparison with hydrodynamic model.
Scattering processes taken into account...
On Extending Neural Networks with Loss Ensembles for Text Classification
Ensemble techniques are powerful approaches
that combine several weak learners
to build a stronger one. As a meta
learning framework, ensemble techniques
can easily be applied to many machine
learning techniques...
Temperature and Doping Dependencies of Electron Mobility in InN, AlN and GaN
Temperature and doping dependencies of
electron mobility in InN, AlN and GaN structures have
been calculated using an ensemble Monte Carlo
simulation. Electronic states within the conduction band
valleys at the , U and K...
Study of High Field Electron Transport in AlN and AlGaN Semiconductors Using Monte Carlo Simulation
An ensemble Monte Carlo simulation is used
to compare high field electron transport in bulk AlN and
AlGaN. For all materials, we find that electron velocity
overshoot only occurs when the electric field in increased to...
Comparison of High Field Electron Transport in Wurtzite Phase of GaN and AlGaN
The results of an ensemble Monte Carlo
simulation of the steady-state and transient electron drift
velocity as a function of applied electric field in GaN and
AlGaN are presented. The effect of temperature and...
Temperature Dependence of High Field Electron Transport Properties in Wurtzite Phase GaN for Device Modeling
An ensemble Monte Carlo simulation has been used to model bulk electron transport at room and higher temperature as a function of high electric fields....