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Now showing items 1-10 of 16

Improving Self-Heating Effect and Maximum Power Density in SOI MESFETs by Using the Hole’s Well Under Channel

Type: Journal Paper

Author : Ramezani, Zahra; Orouji, Ali Asghar

Publisher: IEEE

Year: 2014

Monolithically Integrated MESFET Devices on a High-Speed Silicon Photonics Platform

Type: Journal Paper

Author : Novack, Ari; Shi, Ruoyun; Streshinsky, Matthew; Jingcheng Tao; Kang Tan; Lim, Andy Eu-Jin; Guo-Qiang Lo; Baehr-Jones, Tom; Hochberg, Michael

Publisher: IEEE

Year: 2014

Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

Type: Journal Paper

Author : Umezawa, Hitoshi; Matsumoto, Tad; Shikata, Shin-ichi

Publisher: IEEE

Year: 2014

Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design

Type: Journal Paper

Author : Gholipour, M.; Masoumi, N.; Chen, Y.-Y.C.; Deming Chen; Pourfath, M.

Publisher: IEEE

Year: 2014

Unsignalized cooperative optimization control method based on vehicle speed guidance and information interaction

Type: Conference Paper

Author : Cai, Baigen; Ziru Zheng; Wei ShangGuan; Jian Wang

Publisher: IEEE

Year: 2014

Vision through other senses: Practical use of Sensory Substitution devices as assistive technology for visual rehabilitation

Type: Conference Paper

Author : Maidenbaum, S.; Arbel, R.; Buchs, G.; Shapira, S.; Amedi, A.

Publisher: IEEE

Year: 2014

Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant Segregation

Type: Journal Paper

Author : Che-Wei Chen; Ju-Yuan Tzeng; Cheng-Ting Chung; Hung-Pin Chien; Chao-Hsin Chien; Guang-Li Luo; Pei-Yu Wang; Bing-Yue Tsui

Publisher: IEEE

Year: 2014

Two-Dimensional Numerical Simulation of Bottom-Gate and Dual-Gate Amorphous In-Ga-Zn-O MESFETs

Type: Journal Paper

Author : Chumin Zhao; Linsen Bie; Rui Zhang; Kanicki, J.

Publisher: IEEE

Year: 2014

Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

Type: Journal Paper

Author : Kawanago, T.; Kakushima, K.; Kataoka, Yasuyuki; Nishiyama, A.; Sugii, Nobuyuki; Wakabayashi, H.; Tsutsui, K.; Natori, K.; Iwai, Hisato

Publisher: IEEE

Year: 2014

A Reliable Composite Service Computation Framework

Type: Conference Paper

Author : WenAn Tan; ZiJian Zhang; QuanQuan Zhang; Anqiong Tang; Tong Wang

Publisher: IEEE

Year: 2014

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Improving Self-Heating Effect and Maximum Power Density in SOI MESFETs by Using the Hole’s Well Under Channel

Monolithically Integrated MESFET Devices on a High-Speed Silicon Photonics Platform

Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design

Unsignalized cooperative optimization control method based on vehicle speed guidance and information interaction

Vision through other senses: Practical use of Sensory Substitution devices as assistive technology for visual rehabilitation

Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant Segregation

Two-Dimensional Numerical Simulation of Bottom-Gate and Dual-Gate Amorphous In-Ga-Zn-O MESFETs

Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

A Reliable Composite Service Computation Framework

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Improving Self-Heating Effect and Maximum Power Density in SOI MESFETs by Using the Hole&#x2019;s Well Under Channel

Monolithically Integrated MESFET Devices on a High-Speed Silicon Photonics Platform

Diamond Metal&#x2013;Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design

Unsignalized cooperative optimization control method based on vehicle speed guidance and information interaction

Vision through other senses: Practical use of Sensory Substitution devices as assistive technology for visual rehabilitation

Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant Segregation

Two-Dimensional Numerical Simulation of Bottom-Gate and Dual-Gate Amorphous In-Ga-Zn-O MESFETs

Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

A Reliable Composite Service Computation Framework

Improving Self-Heating Effect and Maximum Power Density in SOI MESFETs by Using the Hole’s Well Under Channel

Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV