The comprehensive optical-electrical-gain-thermal self-consistent model of the 1.55 μm AlGaInAs Photonic Crystal vertical cavity surface emitting diode lasers (PhC VCSELs) with buried tunnel junction (BTJ) has been applied to optimize its threshold...

We present Monte Carlo based calculations of electron transport in

InAs, AlAs and InAlAs based devices. The calculations are performed using a

three valleys ensemble Monte Carlo model that includes numerical formulations...

In this research we have solved the rate equations

for InAs/AlGaAs broadband self-assembled quantum dot

(QD) laser with considering the homogeneous broadening

(HB) and inhomogeneous broadening (IHB)

of the linear...

شبیه سازی انتقال الکترون در دیود InAs n nn با ابعاد زیر میکرون با روش مونت کارلو...

In this paper we have studied the staticcharacteristics

of InAs/AlGaAs broadband self-assembled

quantum-dot laser diodes (SAQD-LDs) solving the rate

equations numerically using fourth-order Runge-Kutta method...